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NJL3281D, NJL3281DG, NJL4281DG

NJL3281D, NJL3281DG, NJL4281DG Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-264, 5-Lead  D/C:`06+(pb-free)

NJL3281D Picture

NJL3281D, NJL3281DG, NJL4281DG Datasheet download

Five Points

Part Number: NJL3281D

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: TO-264, 5-Lead

D/C: `06+(pb-free)

Description: TRANS THERMALTRK NPN 250W TO264

Price Break

1
10
100
250
500
1000
2500
5000
10000

Unit Price

5.00000
4.34800
3.23750
2.77500
2.59000
2.46050
2.36800
2.31250
2.26625

Extended Price

5.00
43.48
323.75
693.75
1295.00
2460.50
5920.00
11562.50
22662.50

(All prices are in USD) Prices for reference only
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About NJL3281D

PDF/DataSheet Download

Datasheet: NJL3281D

File Size: 105725 KB

Manufacturer: ONSEMI [ON Semiconductor]

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About NJL0281D

PDF/DataSheet Download

Datasheet: NJL0281D

File Size: 91980 KB

Manufacturer: ON SEMICONDUCTOR

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NJL4281DG Suppliers

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About NJL0281D

PDF/DataSheet Download

Datasheet: NJL0281D

File Size: 91980 KB

Manufacturer: ON SEMICONDUCTOR

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NJL3281D Parameters

Technical/Catalog InformationNJL3281D
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)260V
Current - Collector (Ic) (Max)15A
Power - Max200W
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic3V @ 1A, 10A
Frequency - Transition30MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-264
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Non-Compliant
Other Names NJL3281D
NJL3281D
NJL3281DOS ND
NJL3281DOSND
NJL3281DOS

NJL3281D Maximum Ratings

Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
230
Vdc
Collector−Base Voltage
VCBO
230
Vdc
Emitter−Base Voltage
VEBO
5
Vdc
Collector−Emitter Voltage − 1.5 V
VCEX
230
Vdc
Collector Current − Continuous
− Peak (Note 1)
IC
15
25
Adc
Base Current − Continuous
IB
1.5
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
PD
200
1.43
W
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
− 65 to +150
°C
DC Blocking Voltage
VR
200
V
Average Rectified Forward Current
IF(AV)
1.0
A

NJL3281D Features

• Thermally Matched Bias Diode
• Instant Thermal Bias Tracking
• Absolute Thermal Integrity
• High Safe Operating Area

NJL3281D Typical Application

• High−End Consumer Audio Products
 Home Amplifiers
Home Receivers
• Professional Audio Amplifiers
 Theater and Stadium Sound Systems
Public Address Systems (PAs)

NJL3281DG Parameters

Technical/Catalog InformationNJL3281DG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)260V
Current - Collector (Ic) (Max)15A
Power - Max200W
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic3V @ 1A, 10A
Frequency - Transition30MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-264-5
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NJL3281DG
NJL3281DG

NJL4281DG Parameters

Technical/Catalog InformationNJL4281DG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)350V
Current - Collector (Ic) (Max)15A
Power - Max230W
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 800mA, 8A
Frequency - Transition35MHz
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-264
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NJL4281DG
NJL4281DG

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