NE856M02, NE856M03, NE8574 Selling Leads, Datasheet
MFG:NEC Package Cooled:SOT-89 D/C:09+
NE856M02, NE856M03, NE8574 Datasheet download
Part Number: NE856M02
MFG: NEC
Package Cooled: SOT-89
D/C: 09+
NE856M02, NE856M03, NE8574
- Table of contents:
Info of NE856M02
Info of NE856M03
Info of NE8574
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About NE856M02
PDF/DataSheet Download
Datasheet: NE856M02
File Size: 64555 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NE856M03
PDF/DataSheet Download
Datasheet: NE856M03
File Size: 38353 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NE8392
PDF/DataSheet Download
Datasheet: NE8392
File Size: 75196 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
NE856M02 General Description
The NE856M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip.
The NE856M02 is an excellent choice for low noise amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications.
NE856M02 Maximum Ratings
|
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
|
VCEO |
Collector to Emitter Voltage |
V |
20 |
|
VCBO |
Collector to Base Voltage |
V |
12 |
|
VEBO |
Emitter to Base Voltage |
V |
3.0 |
|
IC |
Collector Current |
mA |
100 |
|
PT |
Total Power Dissipation2 |
mW |
1.2 |
|
Tj |
Junction Temperature |
°C |
150 |
|
TSTG |
Storage Temperature |
°C |
-65 to +150 |
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Device mounted on 0.7 mm X 16 cm2 double-sided ceramic substrate (copper plating).
NE856M02 Features
• HIGH COLLECTOR CURRENT: 100 mA MAX
• NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE)
• HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz
• HIGH IP3: 32 dBm TYP at 1 GHz
• NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE)
• HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz
• HIGH IP3: 32 dBm TYP at 1 GHz
NE856M03 General Description
The NE856M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE856 is also available in chip, Micro-x, and eight different low cost plastic surface mount package styles.
NE856M03 Maximum Ratings
|
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
|
VCEO |
Collector to Emitter Voltage |
V |
20 |
|
VCBO |
Collector to Base Voltage |
V |
12 |
|
VEBO |
Emitter to Base Voltage |
V |
3 |
|
IC |
Collector Current |
mA |
100 |
|
PT |
Total Power Dissipation |
mW |
125 |
|
Tj |
Junction Temperature |
°C |
150 |
|
TSTG |
Storage Temperature |
°C |
-65 to +150 |
1. Operation in excess of any one of these parameters may result in permanent damage.
NE856M03 Features
• NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
• LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz
• HIGH COLLECTOR CURRENT: ICMAX = 100 mA
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
• LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz
• HIGH COLLECTOR CURRENT: ICMAX = 100 mA
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