NE8500295-4, NE850R599, NE850R599A Selling Leads, Datasheet
MFG:NEC Package Cooled:09+ D/C:1000
NE8500295-4, NE850R599, NE850R599A Datasheet download
Part Number: NE8500295-4
MFG: NEC
Package Cooled: 09+
D/C: 1000
NE8500295-4, NE850R599, NE850R599A
- Table of contents:
Info of NE8500295-4
Info of NE850R599
Info of NE850R599A
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About NE8500295-4
PDF/DataSheet Download
Datasheet: NE8500295-4
File Size: 50108 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NE850R599A
PDF/DataSheet Download
Datasheet: NE850R599A
File Size: 19528 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NE850R599A
PDF/DataSheet Download
Datasheet: NE850R599A
File Size: 19528 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
NE850R599A General Description
The NE850R599A is a medium power GaAs MESFET designed for up to a 1/2W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. Equivalent performance in a chip package can be obtained by using only 1 cell of the NE8500100 chip. The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known.
NE850R599A Maximum Ratings
|
Parameter |
Symbol |
Ratings |
Unit |
| Drain to Source Voltage |
VDSX |
15 |
V |
| Gate to Source Voltage |
VGSO |
-18 |
V |
| Gate to Drain Voltage |
VGSX |
-12 |
V |
| Drain Current |
IDS |
IDSS |
A |
| Gate Current |
IGS |
3.0 |
mA |
| Total Power Dissipation |
PT |
3.0 |
W |
| Channel Temperature |
Tch |
175 |
°C |
| Storage Temperature |
Tstg |
-65 to +175 |
°C |
1. Operation in excess of any one of these parameters may result in permanent damage.
NE850R599A Features
• HIGH OUTPUT POWER: 0.5 W
• HIGH LINEAR GAIN: 9.5 dB
• HIGH EFFICIENCY (PAE): 38%
• SUPERIOR INTERMODULATION DISTORTION
• INDUSTRY STANDARD PACKAGING
• HIGH LINEAR GAIN: 9.5 dB
• HIGH EFFICIENCY (PAE): 38%
• SUPERIOR INTERMODULATION DISTORTION
• INDUSTRY STANDARD PACKAGING
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