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NE2272REV1A-LF, NE24200, NE2427P-50

NE2272REV1A-LF, NE24200, NE2427P-50 Selling Leads, Datasheet

MFG:NEC  Package Cooled:06+  D/C:09+

NE2272REV1A-LF, NE24200, NE2427P-50 Picture

NE2272REV1A-LF, NE24200, NE2427P-50 Datasheet download

Five Points

Part Number: NE2272REV1A-LF

 

MFG: NEC

Package Cooled: 06+

D/C: 09+

 

 

 
 
 
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NE2272REV1A-LF Suppliers

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  • NE2020M

  • D/C: 92+& Qty: 503  Adddate: 2024-12-26
  • Inquire Now
  • Moko Technology Limited   China
    Contact: Mr.Tom   MSN:tom-ic@hotmail.com
    Tel: 0086-0755-23956700
    Fax: 0086-0755-23956710
    (22)

About NE2001-VA20

PDF/DataSheet Download

Datasheet: NE2001-VA20

File Size: 170052 KB

Manufacturer: ROHM [Rohm]

Download : Click here to Download

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NE24200 Suppliers

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  • NE2020M

  • D/C: 92+& Qty: 503  Adddate: 2024-12-26
  • Inquire Now
  • Moko Technology Limited   China
    Contact: Mr.Tom   MSN:tom-ic@hotmail.com
    Tel: 0086-0755-23956700
    Fax: 0086-0755-23956710
    (22)

About NE24200

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Datasheet: NE24200

File Size: 87939 KB

Manufacturer: NEC [NEC]

Download : Click here to Download

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NE2427P-50 Suppliers

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  • NE2020M

  • D/C: 92+& Qty: 503  Adddate: 2024-12-26
  • Inquire Now
  • Moko Technology Limited   China
    Contact: Mr.Tom   MSN:tom-ic@hotmail.com
    Tel: 0086-0755-23956700
    Fax: 0086-0755-23956710
    (22)

About NE2001-VA20

PDF/DataSheet Download

Datasheet: NE2001-VA20

File Size: 170052 KB

Manufacturer: ROHM [Rohm]

Download : Click here to Download

Related PDF Download

Related Part Number

NE24200 General Description

NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.

NE24200 Maximum Ratings

Drain to Source Voltage VDS 4.0 V
Gate to Source Voltage VGS 3.0 V
Drain Current ID IDSS mA
Total Power Dissipation Ptot* 200 mW
Channel Temperature Tch 175
Storage Temperature Tstg 65 to +175
* Chip mounted on a Alumina heatsink (size: 3*3 * 0.6t)

NE24200 Features

• Super Low Noise Figure & High Associated Gain
NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
• Gate Length: Lg = 0.25 m
• Gate Width : Wg = 200 m

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