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The N02L163WN1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using NanoAmp's advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N02L163WN1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40 to +85 and is available in JEDEC standard packages compatible with other standard 128Kb x 16 SRAMs.
N02L163WN1A Maximum Ratings
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
0.3 to VCC+0.3
V
Voltage on VCC Supply Relative to VSS
VCC
0.3 to 4.5
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
40 to 125
Operating Temperature
TA
-40 to +85
Soldering Temperature and Time
TSOLDER
260, 10sec
N02L163WN1A Features
• Single Wide Power Supply Range 2.3 to 3.6 Volts • Very low standby current 2.0µA at 3.0V (Typical) • Very low operating current 2.0mA at 3.0V and 1µs (Typical) • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical) • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.8V • Very fast output enable access time 30ns OE access time • Automatic power down to standby mode • TTL compatible three-state output driver • Compact space saving BGA package available