N02L163WN1A

Features: • Single Wide Power Supply Range 2.3 to 3.6 Volts• Very low standby current 2.0µA at 3.0V (Typical)• Very low operating current 2.0mA at 3.0V and 1µs (Typical)• Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)• Simple me...

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SeekIC No. : 004432518 Detail

N02L163WN1A: Features: • Single Wide Power Supply Range 2.3 to 3.6 Volts• Very low standby current 2.0µA at 3.0V (Typical)• Very low operating current 2.0mA at 3.0V and 1µs (Typical...

floor Price/Ceiling Price

Part Number:
N02L163WN1A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Single Wide Power Supply Range 2.3 to 3.6 Volts
• Very low standby current 2.0µA at 3.0V (Typical)
• Very low operating current 2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)
• Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion
• Low voltage data retention Vcc = 1.8V
• Very fast output enable access time 30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package available



Pinout

  Connection Diagram


Specifications

Item Symbol Rating Unit
Voltage on any pin relative to VSS VIN,OUT 0.3 to VCC+0.3 V
Voltage on VCC Supply Relative to VSS VCC 0.3 to 4.5 V
Power Dissipation PD 500 mW
Storage Temperature TSTG 40 to 125
Operating Temperature TA -40 to +85
Soldering Temperature and Time TSOLDER 260, 10sec



Description

The N02L163WN1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using NanoAmp's advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N02L163WN1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The N02L163WN1A can operate over a very wide temperature range of -40 to +85 and is available in JEDEC standard packages compatible with other standard 128Kb x 16 SRAMs.




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