Features: • Single Wide Power Supply Range 2.3 to 3.6 Volts• Very low standby current 2.0µA at 3.0V (Typical)• Very low operating current 2.0mA at 3.0V and 1µs (Typical)• Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)• Simple me...
N02L163WN1A: Features: • Single Wide Power Supply Range 2.3 to 3.6 Volts• Very low standby current 2.0µA at 3.0V (Typical)• Very low operating current 2.0mA at 3.0V and 1µs (Typical...
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Features: • Single Wide Power Supply Range 2.3 to 3.6 Volts• Very low standby current ...
Item | Symbol | Rating | Unit |
Voltage on any pin relative to VSS | VIN,OUT | 0.3 to VCC+0.3 | V |
Voltage on VCC Supply Relative to VSS | VCC | 0.3 to 4.5 | V |
Power Dissipation | PD | 500 | mW |
Storage Temperature | TSTG | 40 to 125 | |
Operating Temperature | TA | -40 to +85 | |
Soldering Temperature and Time | TSOLDER | 260, 10sec |
The N02L163WN1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using NanoAmp's advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N02L163WN1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The N02L163WN1A can operate over a very wide temperature range of -40 to +85 and is available in JEDEC standard packages compatible with other standard 128Kb x 16 SRAMs.