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MX29F1610TX-12, MX29F1611, MX29F1611MC

Table of contents:
Info of MX29F1610TX-12
Info of MX29F1611
Info of MX29F1611MC

MX29F1610TX-12, MX29F1611, MX29F1611MC Selling Leads, Datasheet

MFG:MX Package Cooled:TSSOP D/C:9741

MX29F1610TX-12, MX29F1611, MX29F1611MC Picture

MX29F1610TX-12, MX29F1611, MX29F1611MC Datasheet download

Five Points

Part Number: MX29F1610TX-12

MFG: MX

Package Cooled: TSSOP

D/C: 9741

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MX29F1611 General Description

The MX29F1611 is a 16-mega bit Pagemode Flash memory organized as either 1M wordx16 or 2M bytex8.The MX29F1611 includes 16-128KB(131,072 Bytes)
blocks or 16-64KW(65,536 Words)blocks. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory and fast pagemode access. The MX29F1611 is packaged 44-pin SOP. It is designed to be reprogrammed and erased insystem or in-standard EPROM programmers.

The standard MX29F1611 offers access times as fast as 100ns,allowing operation of high-speed microprocessors without wait. To eliminate bus contention, the MX29F1611 has separate chip enable CE, output enable (OE), and write enable (WE) controls.

MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29F1611 uses a command register to manage this functionality.

To allow for simple in-system reprogrammability, the MX29F1611 does not require high input voltages for programming. Five-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM.

MXIC Flash technology reliably stores memory contents even after 10,000 cycles. The MXIC's cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F1611 uses a 5V ± 5% VCC supply to perform the Auto Erase and Auto Program algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC +1V.

MX29F1611 Maximum Ratings

RATING	VALUE
Ambient Operating Temperature	0°C to 70°C
Storage Temperature	-65°C to 125°C
Applied Input Voltage	-0.5V to VCC +7.0V
Applied Output Voltage	-0.5V to VCC +7.0V
VCC to Ground Potential	-0.5V to 7.0V
A9	-0.5V to 13.0V

NOTICE:
Specifications contained within the following tables are subject to change.

MX29F1611 Features

• 5V ±5% write, erase and read
• JEDEC-standard EEPROM commands
• Endurance: 10,000 cycles
• Fast access time: 100/120/150ns
• Fast pagemode access time: 50/60/70ns
• Page access depth: 16 bytes/8 words, page address A0, A1, A2
• Sector erase architecture
- 16 equal sectors of 128k bytes each
- Sector erase time: 150ms typical
• Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors or the whole chip with Erase Suspend capability
- Automatically programs and verifies data at specified addresses
• Status Register feature for detection of program or erase cycle completion
• Low VCC write inhibit is equal to or less than 3.2V
• Software and hardware data protection
• Page program operation
- Internal address and data latches for 128 bytes/64 words per page
- Page programming time: 5ms typical
- Byte programming time: 39us in average
• Low power dissipation
- 80mA active current
- 100uA standby current
• CMOS inputs and outputs
• Two independently Protected sectors
• Industry standard surface mount packaging
- 44 lead SOP

MX29F1611 Connection Diagram

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