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MW7IC18100NB, MW7IC18100NBR, MW7IC18100NBR1

Table of contents:
Info of MW7IC18100NB
Info of MW7IC18100NBR
Info of MW7IC18100NBR1

MW7IC18100NB, MW7IC18100NBR, MW7IC18100NBR1 Selling Leads, Datasheet

MFG:Freescale Semiconductor Category:RF and RFID D/C:07+

MW7IC18100NB, MW7IC18100NBR, MW7IC18100NBR1 Picture

MW7IC18100NB, MW7IC18100NBR, MW7IC18100NBR1 Datasheet download

Five Points

Part Number: MW7IC18100NB

Category: RF and RFID

MFG: Freescale Semiconductor

Package Cooled:

D/C: 07+

Description: IC PWR AMP RF LDMOS TO272-14

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MW7IC18100NBR1 Parameters

Technical/Catalog Information	MW7IC18100NBR1
Vendor	Freescale Semiconductor
Category	RF and RFID
Package / Case	TO-272-14
Voltage - Supply	24 ~ 32V
Current - Supply	1.18A
Gain	30dB
Frequency	1.805GHz ~ 2.05GHz
RF Type	GSM, EDGE
Packaging	Tape & Reel (TR)
Noise Figure	-
P1db	51.93dBm
Test Frequency	1.9GHz
Drawing Number	375; 1617-02; ; 14
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MW7IC18100NBR1 MW7IC18100NBR1

MW7IC18100NBR1 General Description

The MW7IC18100N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2050 MHz. This multi -stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA.

MW7IC18100NBR1 Maximum Ratings

Rating	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	-0.5, +65	Vdc
Gate-Source Voltage	V_GS	-0.5, +6	Vdc
Storage Temperature Range	T_stg	-65 to +200	°C
Operating Junction Temperature	T_J	200	°C

MW7IC18100NBR1 Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MW7IC18100NBR1 Connection Diagram

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