MTV6018, MTV6116, MTV6N100E Selling Leads, Datasheet
Package Cooled:DIP D/C:TO-3P
MTV6018, MTV6116, MTV6N100E Datasheet download
Part Number: MTV6018
MFG: --
Package Cooled: DIP
D/C: TO-3P
MTV6018, MTV6116, MTV6N100E
- Table of contents:
Info of MTV6018
Info of MTV6116
Info of MTV6N100E
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About MTV003
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Datasheet: MTV003
File Size: 229775 KB
Manufacturer: ETC [ETC]
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About MTV003
PDF/DataSheet Download
Datasheet: MTV003
File Size: 229775 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About MTV6N100E
PDF/DataSheet Download
Datasheet: MTV6N100E
File Size: 268772 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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MTV6N100E General Description
The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drainto source diode with a fast recovery time. Designed for high voltage, high speed switching applications in surface mount PWM motor controls and both acdc and dcdc power supplies. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTV6N100E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
1000 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
1000 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS |
+20 +40 |
Vdc |
| Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
6.0 4.2 18 |
Adc Apk |
| Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C (1) |
PD |
178 1.43 2.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =100Vdc,VGS = 10Vdc, Vdc,Peak IL =6.0Apk, L = 27.77mH, RG = 25) |
EAS |
720 |
mJ |
| Thermal Resistance - Junction to Cas - Junction to Case - Junction to Ambient(1) |
RJC RJA RJA |
0.70 62.5 35 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
MTV6N100E Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured Not Sheared
• Specifically Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm, 13inch/500 Unit Tape & Reel, Add RL Suffix to Part Number
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured Not Sheared
• Specifically Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm, 13inch/500 Unit Tape & Reel, Add RL Suffix to Part Number
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