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MTSC6405DJ-25, MTSF1P02HD, MTSF1P02HDR2

Table of contents:
Info of MTSC6405DJ-25
Info of MTSF1P02HD
Info of MTSF1P02HDR2

MTSC6405DJ-25, MTSF1P02HD, MTSF1P02HDR2 Selling Leads, Datasheet

MFG:SOJ24 Package Cooled:SSOP D/C:09+

MTSC6405DJ-25, MTSF1P02HD, MTSF1P02HDR2 Picture

MTSC6405DJ-25, MTSF1P02HD, MTSF1P02HDR2 Datasheet download

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Part Number: MTSC6405DJ-25

MFG: SOJ24

Package Cooled: SSOP

D/C: 09+

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MTSF1P02HD General Description

Micro8™ devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to achieve lowest possible onresistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. Micro8™ devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

MTSF1P02HD Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	20	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	20	Vdc
GatetoSource Voltage - Continuous	V_GS	± 8.0	Vdc
Drain Current - Continuous @ T_A= 25°C (2) - Continuous @ _TA = 70°C (2) - Pulsed Drain Current (3)	I_D I_D I_DM	1.8 1.6 14.4	Adc Apk
Total Power Dissipation @ T_A = 25°C (1) Linear Derating Factor (1)	P_D	1.8 14.3	Watts MW/°C
Total Power Dissipation @ T_A = 25°C (2) Linear Derating Factor (2)	P_D	0.78 6.25	Watts MW/°C
Operating and Storage Temperature Range	T_J, T_stg	55 to 150	°C

MTSF1P02HD Features

• Miniature Micro8 Surface Mount Package - Saves Board Space
• Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I_DSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided

MTSF1P02HD Connection Diagram

MTSF1P02HDR2 General Description

Micro8E devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to achieve lowest possible onresistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. Micro8E devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

MTSF1P02HDR2 Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	20	Vdc
DraintoGate Voltage (RGS = 1.0 MW)	V_DGR	20	Vdc
GatetoSource Voltage - Continuous	V_GS	± 8.0	Vdc Vpk
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 ms)	I_D I_D I_DM	1.8 1.6 14.4	Adc Apk
Total Power Dissipation @ TA = 25°C (1) Linear Derating Factor (1)	P_D	1.8 14.3	Watts mW/°C
Total Power Dissipation @ TA = 25°C (2) Linear Derating Factor (2)	P_D	0.78 6.25	Watts mW/°C
Operating and Storage Temperature Range	T_J, T_stg	55 to 150	°C

(1) When mounted on 1 inch square FR4 or G10 board (VGS = 4.5 V, @ Steady State)
(2) When mounted on minimum recommended FR4 or G10 board (VGS = 4.5 V, @ Steady State)
(3) Repetitive rating; pulse width limited by maximum junction temperature.

MTSF1P02HDR2 Features

• Miniature Micro8 Surface Mount Package - Saves Board Space
• Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided

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