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MSQA6V1W5T2, MSQA6V1W5T2G, MSQC6410W

MSQA6V1W5T2, MSQA6V1W5T2G, MSQC6410W Selling Leads, Datasheet

MFG:ON Semiconductor (VA)  Category:Circuit Protection  Package Cooled:Sot-363  D/C:09+

MSQA6V1W5T2 Picture

MSQA6V1W5T2, MSQA6V1W5T2G, MSQC6410W Datasheet download

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Part Number: MSQA6V1W5T2

Category: Circuit Protection

MFG: ON Semiconductor (VA)

Package Cooled: Sot-363

D/C: 09+

Description: TVS ARRAY QUAD ESD 6.6V SOT353

 

 
 
 
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About MSQA6V1W5T2

PDF/DataSheet Download

Datasheet: MSQA6V1W5T2

File Size: 47396 KB

Manufacturer: ONSEMI [ON Semiconductor]

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About MSQ6110C

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Datasheet: MSQ6110C

File Size: 292149 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About MSQC6410W

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Datasheet: MSQC6410W

File Size: 68875 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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MSQA6V1W5T2 Parameters

Technical/Catalog InformationMSQA6V1W5T2
VendorON Semiconductor (VA)
CategoryCircuit Protection
Package / CaseSC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
PackagingCut Tape (CT)
Polarization4 Channel Array - Unidirectional
Power (Watts)150W
Voltage - Reverse Standoff (Typ)3V
Voltage - Breakdown6.1V
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MSQA6V1W5T2
MSQA6V1W5T2
MSQA6V1W5T2OSCT ND
MSQA6V1W5T2OSCTND
MSQA6V1W5T2OSCT

MSQA6V1W5T2 General Description

This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium.

MSQA6V1W5T2 Maximum Ratings

Characteristic
Symbol
Value
Unit
Peak Power Dissipation @ 20s @TA 25 (Note 1)
Ppk
150
W
Steady State Power − 1 Diode (Note 2)
PD
385
mW
Thermal Resistance Junction to Ambient Above 25, Derate
RJA
325
3.1
/W
mW/
Maximum Junction Temperature
TJmax
150
Operating Junction and Storage Temperature Range
TJ Tstg
−55 to +150
ESD Discharge MIL STD 883C − Method 3015−6
IEC1000−4−2, Air Discharge
IEC1000−4−2, Contact Discharge
VPP
16
16
9
kV
Lead Solder Temperature (10 seconds duration)
TL
260

MSQA6V1W5T2 Features

• SC88A Package Allows Four Separate Unidirectional Configurations
• Low Leakage < 1 A @ 3 Volt
• Breakdown Voltage: 6.1 Volt − 7.2 Volt @ 1 mA
• Low Capacitance (90 pF typical)
• ESD Protection Meeting IEC1000−4−2

MSQA6V1W5T2 Connection Diagram

MSQA6V1W5T2G Parameters

Technical/Catalog InformationMSQA6V1W5T2G
VendorON Semiconductor (VA)
CategoryCircuit Protection
Package / CaseSC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
PackagingDigi-Reel?
Polarization4 Channel Array - Unidirectional
Power (Watts)150W
Voltage - Reverse Standoff (Typ)3V
Voltage - Breakdown6.1V
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MSQA6V1W5T2G
MSQA6V1W5T2G
MSQA6V1W5T2GOSDKR ND
MSQA6V1W5T2GOSDKRND
MSQA6V1W5T2GOSDKR

MSQC6410W Maximum Ratings

Part Number
Parameter
MSQC6110W
MSQC6140W
MSQC6110W
MSQC6140W
MSQC6110W
MSQC6140W
Units
Continuous Forward Current
(each segment)
15
25
25
mA
Peak Forward Current
(F = 10KHz, D/F = 1/10)
60
100
90
mA
Power Dissipation (PD)
40
75
70
mW
*Derate Linearly from 25°C
0.17
0.33
0.33
mW
Reverse Voltage per Die 5 Volts
Operating and Storage Temperature Range -40°C to +85°C
Lead soldering time (1/16 inch from standoffs) 5 seconds @ 230°C

MSQC6410W Features

• Bright Bold Segments
• Common Anode/Cathode
• Low Power Consumption
• Low Current Capability
• Epoxy Encapsulated PCB
• High Performance
• High Reliability

MSQC6410W Typical Application

• Appliances
• Automotive
• Instrumentation
• Process Control

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