MP420-012-0, MP4201, MP4204 Selling Leads, Datasheet
MFG:TI Package Cooled:PLCC D/C:08+/09+
MP420-012-0, MP4201, MP4204 Datasheet download
Part Number: MP420-012-0
MFG: TI
Package Cooled: PLCC
D/C: 08+/09+
MP420-012-0, MP4201, MP4204
- Table of contents:
Info of MP420-012-0
Info of MP4201
Info of MP4204
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About MP4005
PDF/DataSheet Download
Datasheet: MP4005
File Size: 78861 KB
Manufacturer: MCC [Micro Commercial Components]
Download : Click here to Download
About MP4201
PDF/DataSheet Download
Datasheet: MP4201
File Size: 293508 KB
Manufacturer: Toshiba
Download : Click here to Download
About MP4005
PDF/DataSheet Download
Datasheet: MP4005
File Size: 78861 KB
Manufacturer: MCC [Micro Commercial Components]
Download : Click here to Download
MP4201 General Description
The MP4201 is a kind of power MOSFET module. It is silicon N channel MOS type. The device is intended for high power, high speed switching applications and hammer drive, pulse motor drive and inductive load switching. There are some features as follows: (1)4 V gate drive available; (2)small package by full molding (SIP 10 pin); (3)high drain power dissipation (4 devices operation): PT=4 W (Ta=25); (4)low drain-source ON resistance: RDS(ON)=0.33 (typ); (5)low leakage current: IGSS=±5A (max) (VGS=±16 V), IDSS=100A (max) (VDS=120 V); (6)enhancement-mode: Vth=0.8 to 2.0 V (ID=1 mA).
What comes next is about the maximum ratings (Ta=25): (1)drain-source voltage, VDSS: 120 V; (2)gate-source voltage, VGSS: ±20 V; (3)drain current, ID: 3 A ; (4)peak drain current, IDP: 6 A; (5)drain power dissipation (1 device operation), PD: 2.0 W; (6)drain power dissipation (4 devices operation), PDT: 4.0 W; (7)channel temperature, Tch: 150; (8)storage temperature range, Tstg: -55 to +150.
The following is about the electrical characteristics (Ta=25): (1)gate leakage current, IGSS: ±5A max at VGS=±16 V, VDS=0; (2)drain cut-off current, IDSS: 100A max at VDS=120 V, VGS=0; (3)drain-source breakdown voltage, V(BR)DSS: 120 V min at ID=10 mA, VGS=0; (4)gate threshold voltage, Vth: 0.8 V min and 2.0 V max at VDS=10 V, ID=1 mA; (5)forward transfer admittance, |Yfs|: 1.5 S min and 3.2 S typ at VDS=10 V, ID=1.5 A; (6)drain-source ON resistance, RDS(ON): 0.42 typ and 0.74 max at ID=1.5 A, VGS=4 V; 0.33 typ and 0.45 max at ID=1.5 A, VGS=10 V ; (7)input capacitance, Ciss: 350 pF typ at VDS=10 V, VGS=0, f=1 MHz; (8)reverse transfer capacitance, Crss: 35 pF typ at VDS=10 V, VGS=0, f=1 MHz; (9)output capacitance, Coss: 155 pF typ at VDS=10 V, VGS=0, f=1 MHz.
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