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The MM74HCT245 3-STATE bi-directional buffer utilizes advanced silicon-gate CMOS technology and is intended for two-way asynchronous communication between data buses. It has high drive current outputs which enable high speed operation even when driving large bus capacitances. This circuit possesses the low power consumption of CMOS circuitry, yet has speeds comparable to low power Schottky TTL circuits.
This device is TTL input compatible and can drive up to 15 LS-TTL loads, and all inputs are protected from damage due to static discharge by diodes to VCC and ground.
The MM74HCT245 has one active low enable input (G), and a direction control (DIR). When the DIR input is HIGH, data flows from the A inputs to the B outputs. When DIR is LOW, data flows from B to A.
MM74HCT devices are intended to interface between TTL and NMOS components and standard CMOS devices. These parts are also plug-in replacements for LS-TTL devices and can be used to reduce power consumption in existing designs.
MM74HCT245 Maximum Ratings
Supply Voltage (VCC) ............-0.5 to +7.0V DC Input Voltage (VIN) .........-1.5 to VCC +1.5V DC Output Voltage (VOUT) .......-0.5 to VCC +0.5V Clamp Diode Current (IIK, IOK) ..........±20 mA DC Output Current, per pin (IOUT) ........±35 mA DC VCC or GND Current, per pin (ICC).......±70 mA Storage Temperature Range (TSTG) ..-65°C to +150°C Power Dissipation (PD) (Note 3)..................... 600 mW S.O. Package only................ 500 mW Lead Temperature (TL) (Soldering 10 seconds).............. 260°C Note 1: Absolute Maximum Ratings are those values beyond which damage to the device may occur. Note 2: Unless otherwise specified all voltages are referenced to ground.
MM74HCT245 Features
·TTL input compatible ·3-STATE outputs for connection to system busses ·High output drive current: 6 mA (min) ·High speed: 16 ns typical propagation delay ·Low power: 80 mA (74HCT Series)