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• Temperature Compensated Gate Collector Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability
MGP15N40CL Maximum Ratings
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCES
CLAMPED
Vdc
CollectorGate Voltage
VCGR
CLAMPED
Vdc
GateEmitter Voltage
VGE
CLAMPED
Vdc
Collector Current - Continuous
IC
15
Adc Apk
Total Power Dissipation @ TC = 25°C
PD
136 0.91
Watts W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to 175
°C
Single Pulse CollectortoEmitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, PEAK IL = 14.2 A, L = 3.0 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, PEAK IL = 10 A, L = 3.0 mH, Starting TJ = 150°C
EAS
300 150
mJ
Thermal Resistance - Junction to Case - Junction to Ambient
RqJC RqJA
1.1 62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 5 seconds