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MC74VHC1G04, MC74VHC1G04D, MC74VHC1G04D/V5

MC74VHC1G04, MC74VHC1G04D, MC74VHC1G04D/V5 Selling Leads, Datasheet

MFG:MOTO  Package Cooled:SOT353  D/C:09+

MC74VHC1G04, MC74VHC1G04D, MC74VHC1G04D/V5 Picture

MC74VHC1G04, MC74VHC1G04D, MC74VHC1G04D/V5 Datasheet download

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Part Number: MC74VHC1G04

 

MFG: MOTO

Package Cooled: SOT353

D/C: 09+

 

 

 
 
 
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About MC74VHC1G04

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Datasheet: MC74VHC1G04

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Manufacturer: ONSEMI [ON Semiconductor]

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About MC74VHC1G04DFT1

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Datasheet: MC74VHC1G04DFT1

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Manufacturer: MOTOROLA [Motorola, Inc]

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MC74VHC1G04 General Description

The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.

The MC74VHC1G04 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G04 to be used to interface 5 V circuits to 3 V circuits.

MC74VHC1G04 Maximum Ratings

Symbol Parameter Value Unit
VCC DC Supply Voltage 0.5 to + 7.0 V
VIN DC Input Voltage 0.5 to 7.0 V
VOUT DC Output Voltage............. ............. ............. ............. ............. ........... VCC =0
............. ............. ............. ............. ............. ............. ...........High or Low State
0.5 to 7.0
0.5 to Vcc + 0.5
V
IIK Input Diode Current 20 mA
IOK Output Diode Current ............. ............. ............. ........VOUT < GND;VOUT > VCC +20 mA
IOUT DC Output Current, per Pin + 25 mA
ICC DC Supply Current, VCC and GND +50 mA
PD Power dissipation in still air         ............. ............. ............. SC88A, TSOP5 200 mW
JA Thermal resistance ...... ............. ............. ............. ............. SC88A, TSOP5 333 °C/W
TL Lead Temperature, 1 mm from Case for 10 s 260 °C
TJ Junction Temperature Under Bias + 150 °C
Tstg Storage temperature 65 to +150 °C
VESD ESD Withstand Voltage............. ............. .............  Human Body Model (Note 2)
  ............. ............. ............. ............. ............. ............. Machine Model (Note 3)
    ............. ............. ............. ............. ............. Charged Device Model (Note 4)
>2000
> 200
N/A
V
ILATCHUP LatchUp Performance............. Above VCC and Below GND at 125°C (Note 5) ± 500 mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolutemaximumrated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22A114A
3. Tested to EIA/JESD22A115A
4. Tested to JESD22C101A
5. Tested to EIA/JESD78

MC74VHC1G04 Features

• High Speed: t PD = 3.5 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 105; Equivalent Gates = 26

MC74VHC1G04 Connection Diagram

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