MBRS320TR, MBRS320TRPBF, MBRS330 Selling Leads, Datasheet
MFG:IR Package Cooled:DO214AB D/C:09+/10+
MBRS320TR, MBRS320TRPBF, MBRS330 Datasheet download
Part Number: MBRS320TR
MFG: IR
Package Cooled: DO214AB
D/C: 09+/10+
MFG:IR Package Cooled:DO214AB D/C:09+/10+
MBRS320TR, MBRS320TRPBF, MBRS330 Datasheet download
MFG: IR
Package Cooled: DO214AB
D/C: 09+/10+
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Datasheet: MBRS320TR
File Size: 102476 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: MBRS320TRPBF
File Size: 123591 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: MBRS330T3
File Size: 200704 KB
Manufacturer: ON SEMICONDUCTOR
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The MBRS320TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection.
Parameters | Values | Units | Conditions | |
IF(AV) Max. Average Forward Current | 3.0 | A | 50% duty cycle @ TL = 136°C, rectangular wave form | |
IFSM Max. Peak One Cycle Non-Repetitive SurgeCurrent | 820 80 |
A | 5s Sine or 3sRect. pulse 10ms Sine or 6ms Rect. pulse |
Following any rated load condition and with rated VRRM applied |
Surge applied at rated load condition halfwave single phase 60Hz | ||||
EAS Non Repetitive Avalanche Energy | 6 | mJ | TJ = 25 °C, IAS = 1A, L = 10mH | |
IAR Repetitive Avalanche Current | 1.0 | A |
The MBRS320TRPbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery charging, and reverse battery protection.
Parameters |
Value |
Units |
Conditions | |
IF(AV)Max. Average Forward Current |
3.0 |
A |
50% duty cycle @ TL= 136 °C, rectangular wave form | |
IFSM Max. Peak One Cycle Non-Repetitive Surge Current, TJ = 25°C |
820 |
A |
5µs Sine or 3µs Rect. pulse |
Following any rated loadcondition and with rated VRRM applied |
80 | 10ms Sine or 6ms Rect. pulse | |||
EAS Non- Repetitive Avalanche Energy |
4 |
mJ |
TJ= 25 °C, IAS = 1.0A, L = 8mH | |
IAR Repetitive Avalanche Current |
1.0 |
A |
Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. Va = 1.5 x Vr typical |