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Notes: (1)Recommended Value 1.8±0.2/9±1N.m (2)Recommended Value 2.6±0.2N.m
MBN400C33A Features
* High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to low input capacitance MOS gate. *High reliability,high durability module. * Isolated head sink (terminal to base).
MBN400GR12 Maximum Ratings
Item
Symbol
Unit
Value
Collector-Emitter Voltage
VCES
V
1200
Gate-Emitter Voltage
VGES
V
±20
Collector Current
DC
IC
A
400
1ms
ICP
800
Forward Current
DC
IF
A
400 *1
1ms
IFM
800
Collector Power Dissipation
PC
W
2080
Junction Temperature
Tj
°C
-40 ~ +150
Storage Temperature
Tstg
°C
40 ~ +125
Isolation Voltage
Viso
VRMS
2500(AC 1 minute)
Screw Torque
Terminals (M4/M6)
-
N`m (kgf`cm)
1.37(14) / 2.94(30) *2
Mounting
2.94(30) *3
Notes; *1: RMS current of Diode 120 Arms *2: Recommended value 1.18 / 2.45 N`m (12 / 25 kgf`cm) *3: Recommended value 2.45 N`m (25 kgf`cm)
MBN400GR12 Features
· Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) · High reliability structure. · Isolated heat sink (terminals to base).