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MBN400C33A, MBN400D33, MBN400GR12

MBN400C33A, MBN400D33, MBN400GR12 Selling Leads, Datasheet

MFG:HITACHI  Package Cooled:400A/3300V/IGBT/1U  D/C:400A/3300V/IGBT/1U

MBN400C33A, MBN400D33, MBN400GR12 Picture

MBN400C33A, MBN400D33, MBN400GR12 Datasheet download

Five Points

Part Number: MBN400C33A

 

MFG: HITACHI

Package Cooled: 400A/3300V/IGBT/1U

D/C: 400A/3300V/IGBT/1U

 

 

 
 
 
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About MBN400C33A

PDF/DataSheet Download

Datasheet: MBN400C33A

File Size: 64821 KB

Manufacturer: HITACHI [Hitachi Semiconductor]

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MBN400D33 Suppliers

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  • MBN400D33

  • Vendor: Hitachi D/C: 09+& Qty: 550 Note: Mail:salepj@hotmail.com  Adddate: 2024-06-04
  • Inquire Now
  • PUJIA TECH. DEVELOP. CO., LTD   China
    Contact: Mr.Lin   MSN:salepj@hotmail.com
    Tel: 86-755-83624945
    Fax: 86-755-83624801
    (357)

About MBN1200D33A

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Datasheet: MBN1200D33A

File Size: 96209 KB

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MBN400GR12 Suppliers

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  • MBN400GR12

  • Vendor: Hitachi D/C: 03+&   Adddate: 2024-06-04
  • Inquire Now
  • TCLT Co.,LTD.   China
    Contact: Ms.BrandyHua  
    Tel: 86-755-29929313ext801
    Fax: --
    (0)

About MBN400GR12

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Datasheet: MBN400GR12

File Size: 70633 KB

Manufacturer: HITACHI [Hitachi Semiconductor]

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MBN400C33A Maximum Ratings

Item Symbol Unit MBN400C20
Collector Emitter Voltage VCES V 2,000
Gate Emitter Voltage VGES V ±20
Collector Current DC IC A 400
1ms ICp 800
Forward Current DC IF A 400
1ms IFM 800
Collector Power Dissipation Pc W 3,000
Junction Temperature Tj °C -40 ~ +125
Storage Temperature Tstg °C -40 ~ +125
Isolation Voltage VISO VRMS 4,000(AC 1 minute)
Screw Torque Terminals(M4/M8) - N.m 2/10 (1)
Mounting(M5) - 2.8 (2)
Notes: (1)Recommended Value 1.8±0.2/9±1N.m (2)Recommended Value 2.6±0.2N.m

MBN400C33A Features

* High thermal fatigue durability.
(delta Tc=70°C,N>20,000cycles)
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
*High speed,low loss IGBT module.
*Low driving power due to low input
capacitance MOS gate.
*High reliability,high durability module.
* Isolated head sink (terminal to base).

MBN400GR12 Maximum Ratings

Item Symbol Unit Value
Collector-Emitter Voltage VCES V 1200
Gate-Emitter Voltage VGES V ±20
Collector Current DC IC A 400
1ms ICP 800
Forward Current DC IF A 400 *1
1ms IFM 800
Collector Power Dissipation PC W 2080
Junction Temperature Tj °C -40 ~ +150
Storage Temperature Tstg °C 40 ~ +125
Isolation Voltage Viso VRMS 2500(AC 1 minute)
Screw Torque Terminals (M4/M6) - N`m
(kgf`cm)
1.37(14) / 2.94(30) *2
Mounting 2.94(30) *3
Notes; *1: RMS current of Diode 120 Arms
*2: Recommended value 1.18 / 2.45 N`m (12 / 25 kgf`cm)
*3: Recommended value 2.45 N`m (25 kgf`cm)

MBN400GR12 Features

· Low saturation voltage and high speed.
· Low turn-OFF switching loss.
· Low noise due to build-in free-wheeling diode.
    (Ultra Soft and Fast recovery Diode (USFD))
· High reliability structure.
· Isolated heat sink (terminals to base).

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