Features: · High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles)· low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).·High speed,low loss IGBT module.·Low driving power due to low input capacitance MOS gate.·High reliability,high durability module.· ...
MBN1200D33A: Features: · High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles)· low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).·High speed,low loss IGBT module....
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Item |
Symbol |
Unit |
MBN1200D33A | |
Collector Emitter Voltage |
VCES |
V |
3,300 | |
Gate Emitter Voltage |
VGES |
V |
±20 | |
Collector Current |
DC |
IC |
A |
1,200 |
1ms |
ICp |
2,400 | ||
Forward Current |
DC |
IF |
A |
1,200 |
1ms |
IFM |
2,400 | ||
Collector Power Dissipation |
Pc |
W |
12,000 | |
Junction Temperature |
Tj |
°C |
-40 ~ +125 | |
Storage Temperature |
Tstg |
°C |
-40 ~ +125 | |
Isolation Voltage |
VISO |
VRMS |
5,400(AC 1 minute) | |
Screw Torque |
Terminals(M4/M8) |
N.m |
2/10 (1) | |
Mounting(M6) |
6 (2) |