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MB81F641642B-103FN, MB81F641642D-102, MB81F641642D102FN

Table of contents:
Info of MB81F641642B-103FN
Info of MB81F641642D-102
Info of MB81F641642D102FN

MB81F641642B-103FN, MB81F641642D-102, MB81F641642D102FN Selling Leads, Datasheet

MFG:FUJ Package Cooled:TSOP D/C:08+

MB81F641642B-103FN, MB81F641642D-102, MB81F641642D102FN Picture

MB81F641642B-103FN, MB81F641642D-102, MB81F641642D102FN Datasheet download

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Part Number: MB81F641642B-103FN

MFG: FUJ

Package Cooled: TSOP

D/C: 08+

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MB81F641642D-102 General Description

The Fujitsu MB81F641642D is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) containing 67,108,864 memory cells accessible in a 16-bit format. The MB81F641642D features a fully synchronousoperation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F641642D SDRAM is designed to reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing constraints, and may improve data bandwidth of memory as much as 5 times more than a conventional DRAM.

The MB81F641642D is ideally suited for workstations, personal computers, laser printers, high resolution graphic adapters/accelerators and other applications where an extremely large memory and bandwidth are required and where a simple interface is needed.

MB81F641642D-102 Maximum Ratings

Parameter	Symbol	Value	Unit
Voltage of VCC Supply Relative to V_SS Voltage at Any Pin Relative to V_SS Short Circuit Output Current Power Dissipation Storage Temperature	V_CC, V_CCQ V_IN, V_OUT I_OUT P_D T_STG	0.5 to +4.6 0.5 to +4.6 50 to +50 1.3 55 to +125	V V mA W °C

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

MB81F641642D-102 Features

• Single +3.3 V Supply ±0.3 V tolerance
• LVTTL compatible I/O interface
• 4 K refresh cycles every 64 ms
• Four bank operation
• Burst read/write operation and burst read/single write operation capability
• Programmable burst type, burst length, and CAS latency
• Auto-and Self-refresh (every 15.6 ms)
• CKE power down mode
• Output Enable and Input Data Mask

MB81F641642D-102 Connection Diagram

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