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MB811L323229-12/18

Features: • VCCQ: +3.3V Supply ±0.3V tolerance or +2.5V Supply ±0.2V tolerance• VDD: +2.5 V Supply ±0.2 V tolerance• LVCMOS compatible I/O interface• 2 K refresh cycles every 32 ms• Two bank operation (512 K word ´ 32 bit ´ 2 bank)• Burst read/write ...

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SeekIC No. : 004413442 Detail

MB811L323229-12/18: Features: • VCCQ: +3.3V Supply ±0.3V tolerance or +2.5V Supply ±0.2V tolerance• VDD: +2.5 V Supply ±0.2 V tolerance• LVCMOS compatible I/O interface• 2 K refresh cycles every...

MB811L323229-12/18 Data Sheet

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Part Number:
MB811L323229-12/18
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

• VCCQ: +3.3V Supply ±0.3V tolerance or +2.5V Supply ±0.2V tolerance
• VDD: +2.5 V Supply ±0.2 V tolerance
• LVCMOS compatible I/O interface
• 2 K refresh cycles every 32 ms
• Two bank operation (512 K word ´ 32 bit ´ 2 bank)
• Burst read/write operation and burst read/single write operation capability
• Programmable burst type and burst length
-Burst type : Sequential Mode, Interleave Mode
-Burst length : BL = 1, 2, 4, 8, full column (256)
• CAS latency = 2
• Auto-and Self-refresh
• CKE power down mode
• Byte control with DQM0 to DQM3


Specifications

Parameter
Conditions
Rating
Units
Min
Max
Voltage of VCCQ Supply Relative to VSS VCCQ
0.5
+4.6
V
Voltage of VDD Supply Relative to VSS VDD, VDDI
0.5
+3.6
V
Voltage at Any Pin Relative to VSS VIN, VOUT
0.5
+4.6
V
Short Circuit Output Current IOUT
50
+50
mA
Power Dissipation PD
--
1.0
W
Storage Temperature TSTG
55
+125
°C



Description

The Fujitsu MB811L323229-12/18 is a Single Data Rate Interface Fast Cycle Random Access Memory (FCRAM*) containing 33,554,432 memory cells accessible in a 32-bit format. The MB811L323229-12/18 features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence.

The MB811L323229-12/18 is utilized using Fujitsu advanced FCRAM core technology and designed for low power consumption and low voltage operation than regular synchronous DRAM (SDRAM).
 
The MB811L323229-12/18 is dedicated for SiP (System in a package), and ideally suited for various embedded/ consumer applications including digital AVs and image processing where a large band width and low power consumption memory is needed.




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