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The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.
M5M51016BRT-10VL-I Maximum Ratings
Symbol
Parameter
Conditions
Ratings
Unit
Vcc
Supply voltage
With respect to GND
0.3 ~ 4.6
V
VI
Input voltage
0.3* ~ Vcc + 0.3
V
VO
Output voltage
0 ~ Vcc
V
Pd
Power dissipation
Ta=25°C
1
W
Topr
Operating temperature
40 ~ 85
°C
Tstg
Storage temperature
65 ~ 150
°C
M5M51016BRT-10VL-I Features
Single +3.3V power supply Low stand-by current 0.3µA (typ.) Directly TTL compatible : All inputs and outputs Easy memory expansion and power down by CS, BC1 & BC2 Data hold on +2V power supply Three-state outputs : OR-tie capability OE prevents data contention in the I/O bus Common data I/O Package M5M51016BTP,RT..............................44pin 400mil TSOP(II)
M5M51016BRT-10VL-I Typical Application
Small capacity memory units
M5M51016BRT-10VL-I Connection Diagram
M5M51016BRT-10VLL-I General Description
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.
M5M51016BRT-10VLL-I Maximum Ratings
Symbol
Parameter
Conditions
Ratings
Unit
Vcc
Supply voltage
With respect to GND
0.3 ~ 4.6
V
VI
Input voltage
0.3* ~ Vcc + 0.3
V
VO
Output voltage
0 ~ Vcc
V
Pd
Power dissipation
Ta=25°C
1
W
Topr
Operating temperature
40 ~ 85
°C
Tstg
Storage temperature
65 ~ 150
°C
M5M51016BRT-10VLL-I Features
Single +3.3V power supply Low stand-by current 0.3µA (typ.) Directly TTL compatible : All inputs and outputs Easy memory expansion and power down by CS, BC1 & BC2 Data hold on +2V power supply Three-state outputs : OR-tie capability OE prevents data contention in the I/O bus Common data I/O Package M5M51016BTP,RT..............................44pin 400mil TSOP(II)