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The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM.
They are low standby current and low operation current and ideal for the battery back-up application.
The M5M51008CVP,RV,KV,KR are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). Two types of devices are available. M5M51008CVP,KV(normal lead bend type package), M5M51008CRV,KR(reverse lead bend type package).Using both types of devices, it becomes very easy to design a printed circuit board.
M5M51008CP-55HI Maximum Ratings
Symbol
Parameter
Conditions
Ratings
Unit
Vcc
Supply voltage
With respect to GND
0.3*~7
V
VI
Input voltage
0.3* ~ Vcc + 0.3
V
VO
Output voltage
0 ~ Vcc
V
Pd
Power dissipation
Ta=25°C
700
mW
Topr
Operating temperature
40 ~ 85
°C
Tstg
Storage temperature
65 ~ 150
°C
M5M51008CP-55HI Features
Low stand-by current 0.1µA (typ.) Directly TTL compatible : All inputs and outputs Easy memory expansion and power down by S1,S2 Data hold on +2V power supply Three-state outputs : OR - tie capability OE prevents data contention in the I/O bus Common data I/O Package M5M51008CP ```````````` 32pin 600mil DIP M5M51008CFP ```````````` 32pin 525mil SOP M5M51008CVP,RV ```````````` 32pin 8 X 20 mm2 TSOP M5M51008CKV,KR ```````````` 32pin 8 X 13.4 mm2 TSOP