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• NPN Silicon Microwave Power Transistors • Common Base Configuration • Broadband Class C Operation • High Efficiency Inter digitized Geometry • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic Package • RoHS Compliant
MAPR-001011-850S00 Maximum Ratings
Symbol
Parameter
Ratings
Units
VCES
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
3.0
V
IC
Collector Current (Peak)
250
A
PTOT
Power Dissipation @ +25°C
11.6
kW
TSTG
Storage Temperature
-65 to +200
TJ
Junction Temperature
200
MAPR-001011-850S00 Features
• NPN Silicon Microwave Power Transistors • Common Base Configuration • Broadband Class C Operation • High Efficiency Inter digitized Geometry • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic Package • RoHS Compliant