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M-APP550E-32A13-DB, MAPR-000912-500S00, MAPR-001011-850S00

M-APP550E-32A13-DB, MAPR-000912-500S00, MAPR-001011-850S00 Selling Leads, Datasheet

MFG:AGERE SYSTEMS  Package Cooled:N/A  D/C:0528

M-APP550E-32A13-DB, MAPR-000912-500S00, MAPR-001011-850S00 Picture

M-APP550E-32A13-DB, MAPR-000912-500S00, MAPR-001011-850S00 Datasheet download

Five Points

Part Number: M-APP550E-32A13-DB

 

MFG: AGERE SYSTEMS

Package Cooled: N/A

D/C: 0528

 

 

 
 
 
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M-APP550E-32A13-DB Suppliers

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  • M-APP220E-3-2A13

  • Pack: BGA D/C: 06+& Qty: 42 Note: Original  Adddate: 2024-12-25
  • Inquire Now
  • First IC   China
    Contact: Mr.hary ho  
    Tel: 86-021-13764939
    Fax:
    (4)

About M-A-JJ

PDF/DataSheet Download

Datasheet: M-A-JJ

File Size: 299847 KB

Manufacturer: HIROSE [Hirose Electric]

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MAPR-000912-500S00 Suppliers

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About MAPR-000912-500S00

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Datasheet: MAPR-000912-500S00

File Size: 125489 KB

Manufacturer: MACOM [Tyco Electronics]

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MAPR-001011-850S00 Suppliers

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About MAPR-001011-850S00

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Datasheet: MAPR-001011-850S00

File Size: 123020 KB

Manufacturer: MACOM [Tyco Electronics]

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MAPR-000912-500S00 Maximum Ratings

Symbol Parameter Ratings Units
VCES Collector-Emitter Voltage 80 V
VEBO Emitter-Base Voltage 3.0 V
IC Collector Current (Peak) 52.5 A
PTOT Power Dissipation @ +25°C 2.2 kW
TSTG Storage Temperature -65 to +200
TJ Junction Temperature 200

MAPR-000912-500S00 Features

•  NPN Silicon Microwave Power Transistors
•  Common Base Configuration
•  Broadband Class C Operation
•  High Efficiency Inter digitized Geometry
•  Diffused Emitter Ballasting Resistors
•  Gold Metallization System
•  Internal Input and Output Impedance Matching
•  Hermetic Metal/Ceramic Package
•  RoHS Compliant 
 

MAPR-001011-850S00 Maximum Ratings

Symbol Parameter Ratings Units
VCES Collector-Emitter Voltage 80 V
VEBO Emitter-Base Voltage 3.0 V
IC Collector Current (Peak) 250 A
PTOT Power Dissipation @ +25°C 11.6 kW
TSTG Storage Temperature -65 to +200
TJ Junction Temperature 200

MAPR-001011-850S00 Features

•  NPN Silicon Microwave Power Transistors
•  Common Base Configuration
•  Broadband Class C Operation
•  High Efficiency Inter digitized Geometry
•  Diffused Emitter Ballasting Resistors
•  Gold Metallization System
•  Internal Input and Output Impedance Matching
•  Hermetic Metal/Ceramic Package
•  RoHS Compliant

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