LEE1015T, LEG.6, LEG.7 Selling Leads, Datasheet
MFG:RF Package Cooled:N/A D/C:PHILIPS
LEE1015T, LEG.6, LEG.7 Datasheet download
Part Number: LEE1015T
MFG: RF
Package Cooled: N/A
D/C: PHILIPS
LEE1015T, LEG.6, LEG.7
- Table of contents:
Info of LEE1015T
Info of LEG.6
Info of LEG.7
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About LEE1015T
PDF/DataSheet Download
Datasheet: LEE1015T
File Size: 48238 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About
PDF/DataSheet Download
Datasheet:
File Size: KB
Manufacturer:
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About
PDF/DataSheet Download
Datasheet:
File Size: KB
Manufacturer:
Download : Click here to Download
LEE1015T General Description
NPN silicon planar epitaxial microwave power transistor in a SOT122A metal ceramic package.
LEE1015T Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | 40 | V |
| VCEO | collector-emitter voltage | open base | - | 22 | V |
| VCER | collector-emitter voltage | RBE =10 Ω | - | 40 | V |
| VEBO | emitter-base voltage | open collector | - | 3 | V |
| IC | collector current | - | 500 | mA | |
| Tsld | soldering temperature | t 10 s; note 1 | - | 235 | W |
| Ptot | total power dissipation | Tmb =75 °C | - | 7.5 | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 200 |
LEE1015T Features
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Gold metallization realizes very good stability of the characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance.
• Interdigitated structure provides high emitter efficiency
• Gold metallization realizes very good stability of the characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance.
LEE1015T Typical Application
Intended for use in common emitter, class A power amplifiers for applications that require a high level of linearity.
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