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LBE2003S, LBE2009S, LBE4

LBE2003S, LBE2009S, LBE4 Selling Leads, Datasheet

MFG:PHILIPS  Package Cooled:SOT4  D/C:2007+

LBE2003S, LBE2009S, LBE4 Picture

LBE2003S, LBE2009S, LBE4 Datasheet download

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Part Number: LBE2003S

 

MFG: PHILIPS

Package Cooled: SOT4

D/C: 2007+

 

 

 
 
 
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About LBE2003S

PDF/DataSheet Download

Datasheet: LBE2003S

File Size: 129035 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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LBE2009S Suppliers

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About LBE2009S

PDF/DataSheet Download

Datasheet: LBE2009S

File Size: 129035 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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LBE4 Suppliers

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About LBE2003S

PDF/DataSheet Download

Datasheet: LBE2003S

File Size: 129035 KB

Manufacturer: PHILIPS [Philips Semiconductors]

Download : Click here to Download

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LBE2003S General Description

The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package.

LBE2003S Features

·Diffused emitter ballasting resistors
·Self-aligned process entirely ion implanted and gold metallization
·Optimum temperature profile
·Excellent performance and reliability.

LBE2003S Typical Application

·Common emitter class-A linear power amplifiers up to 4 GHz.

LBE2009S General Description

The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package.

LBE2009S Features

·Diffused emitter ballasting resistors
·Self-aligned process entirely ion implanted and gold metallization
·Optimum temperature profile
·Excellent performance and reliability.

LBE2009S Typical Application

·Common emitter class-A linear power amplifiers up to 4 GHz.

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