L9610C, L9611C, L9613 Selling Leads, Datasheet
MFG:ST Package Cooled:N/A D/C:3
MFG:ST Package Cooled:N/A D/C:3
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: L9610C
File Size: 203247 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: L9611C
File Size: 203247 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: L9613
File Size: 72419 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The L9610C/11C is a monolithic integrated circuit working in PWM mode as controller of an external powerMOS transistor in High Side Driver configuration.
Features of the device include controlled slope of the leading and trailing edge of the gate driving voltage, linear current limiting with protectiontimer, settableswitching frequencyfo,TTL compatibleenable function, protection status ouput pin. The device is mounted in SO16 micropackage, and DIP16 package.
Symbol | Parameter | Value | Unit |
VS | Max. Supply Voltage | 26 | v |
Transient Peak Supply Voltage (R1 100): Load Dump: 5ms trise 10ms; f Fall Time Constant = 100ms; RSOURCE 0.5 Field Decay: 5ms tfall 10ms; r Rise Time Constant = 33ms; RSOURCE 10 Low Energy Spike: trise =1s, tfall = 2ms, RSOURCE 10 |
60 80 ±100 |
V V V | |
IS | Max. Supply Current (t < 300 ms) | 0.3 | A |
VIN | Input Voltage | 0.3 < VIN < VS 2.5 | V |
TJ/Tstg | Junction and Storage Temperature Range | 55 to 150 | °C |
The L9610C/11C is a monolithic integrated circuit working in PWM mode as controller of an external powerMOS transistor in High Side Driver configuration.
Features of the device include controlled slope of the leading and trailing edge of the gate driving voltage, linear current limiting with protectiontimer, settableswitching frequencyfo,TTL compatibleenable function, protection status ouput pin. The device is mounted in SO16 micropackage, and DIP16 package.
Symbol | Parameter | Value | Unit |
VS | Max. Supply Voltage | 26 | v |
Transient Peak Supply Voltage (R1 100): Load Dump: 5ms trise 10ms; f Fall Time Constant = 100ms; RSOURCE 0.5 Field Decay: 5ms tfall 10ms; r Rise Time Constant = 33ms; RSOURCE 10 Low Energy Spike: trise =1s, tfall = 2ms, RSOURCE 10 |
60 80 ±100 |
V V V | |
IS | Max. Supply Current (t < 300 ms) | 0.3 | A |
VIN | Input Voltage | 0.3 < VIN < VS 2.5 | V |
TJ/Tstg | Junction and Storage Temperature Range | 55 to 150 | °C |