L6380, L6380D, L6381 Selling Leads, Datasheet
MFG:ST Package Cooled:DIP-8 D/C:59
L6380, L6380D, L6381
- Table of contents:
Info of L6380
Info of L6380D
Info of L6381
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About L6380
PDF/DataSheet Download
Datasheet: L6380
File Size: 60358 KB
Manufacturer: STMicro
Download : Click here to Download
About L6301
PDF/DataSheet Download
Datasheet: L6301
File Size: 1147081 KB
Manufacturer: HAMAMATSU [Hamamatsu Corporation]
Download : Click here to Download
About L6381
PDF/DataSheet Download
Datasheet: L6381
File Size: 60358 KB
Manufacturer: STMicro
Download : Click here to Download
L6380 General Description
The L6380/L6381 is a high-voltage device with a driving stage floating up to 600V.
It can be used to drive N-channel power MOSFET and IGBT, in high-side and low-side configurations.
The device has a logic input (CMOS and LSTTL compatible) and two comparator inputs compatible to ground.
To drive the external power device the signal coming from input logic is fed into a pulse generator that in turns drives the level shifting sructure (that include two High Voltage DMOS) designed to ensure low power dissipation and high noise immunity. The output buffer (in Totem Pole arrangement) is able to sink from or source to the gate of the external device the current needed to switch it ON or OFF.
The falling edge of the signal coming from the input logic will turn ON while the rising edge will turn OFF the driven power device. This operation will ensure low current sinking from the HV rail during commutations.
L6380 Maximum Ratings
| Symbol | Parameter |
Value |
Unit |
| VBOOT | Supply voltage of bootstrapped section |
600+VS |
V |
| VHVG | Gate voltage of upper driver |
600+VS |
V |
| VOUT | Output voltage |
600 |
V |
| VBOOT - VOUT | Difference between boot voltage and output voltage |
18 |
V |
| VHVG - VOUT | Difference between gate voltage of upper gate and output voltage |
18 |
V |
| VS | Supply voltage |
18 |
V |
| VIN | Input voltage |
VS-2V |
V |
| dVOUT/dt | Transient offset supply voltage |
±50 |
V/ns |
| VOUT - VGND | Difference between output voltage and ground (tp 100 ns) |
-10 |
V |
| Tamb | Ambient Temperature Range (operative) |
-25 to +85 |
|
| TJ | Junction Temperature |
150 |
|
| TST | Storage Temperature |
-40 to 150 |
|
| Ptot | Total Power Dissipation (at Tj = 85°C) |
650 |
mW |
L6380 Features
·VH.V. UP TO 600 V
·SUPPLY VOLTAGE UP TO 17 V
·DRIVER CURRENT CAPABILITY:
SINK CURRENT = 200 mA
SOURCE CURRENT = 100 mA
·UNDER VOLTAGE LOCKOUT WITH HYSTERESIS
·CMOS/LSTTL COMPATIBLE INVERTING INPUT
·dV/dt IMMUNITY ± 50 V/nS IN FULL TEMPERATURE RANGE
·CURRENT MODE CONTROL REFERENCE INPUT
·CURRENT/VOLTAGE MODE OPERATIO (L6380)
·VOLTAGEMODE OPERATION(L6381)
·8 PINS PACKAGE
·SUPPLY VOLTAGE UP TO 17 V
·DRIVER CURRENT CAPABILITY:
SINK CURRENT = 200 mA
SOURCE CURRENT = 100 mA
·UNDER VOLTAGE LOCKOUT WITH HYSTERESIS
·CMOS/LSTTL COMPATIBLE INVERTING INPUT
·dV/dt IMMUNITY ± 50 V/nS IN FULL TEMPERATURE RANGE
·CURRENT MODE CONTROL REFERENCE INPUT
·CURRENT/VOLTAGE MODE OPERATIO (L6380)
·VOLTAGEMODE OPERATION(L6381)
·8 PINS PACKAGE
L6380 Connection Diagram
L6381 General Description
The L6380/L6381 is a high-voltage device with a driving stage floating up to 600V.
It can be used to drive N-channel power MOSFET and IGBT, in high-side and low-side configurations.
The device has a logic input (CMOS and LSTTL compatible) and two comparator inputs compatible to ground.
To drive the external power device the signal coming from input logic is fed into a pulse generator that in turns drives the level shifting sructure (that include two High Voltage DMOS) designed to ensure low power dissipation and high noise immunity. The output buffer (in Totem Pole arrangement) is able to sink from or source to the gate of the external device the current needed to switch it ON or OFF.
The falling edge of the signal coming from the input logic will turn ON while the rising edge will turn OFF the driven power device. This operation will ensure low current sinking from the HV rail during commutations.
L6381 Maximum Ratings
| Symbol | Parameter |
Value |
Unit |
| VBOOT | Supply voltage of bootstrapped section |
600+VS |
V |
| VHVG | Gate voltage of upper driver |
600+VS |
V |
| VOUT | Output voltage |
600 |
V |
| VBOOT - VOUT | Difference between boot voltage and output voltage |
18 |
V |
| VHVG - VOUT | Difference between gate voltage of upper gate and output voltage |
18 |
V |
| VS | Supply voltage |
18 |
V |
| VIN | Input voltage |
VS-2V |
V |
| dVOUT/dt | Transient offset supply voltage |
±50 |
V/ns |
| VOUT - VGND | Difference between output voltage and ground (tp 100 ns) |
-10 |
V |
| Tamb | Ambient Temperature Range (operative) |
-25 to +85 |
|
| TJ | Junction Temperature |
150 |
|
| TST | Storage Temperature |
-40 to 150 |
|
| Ptot | Total Power Dissipation (at Tj = 85°C) |
650 |
mW |
L6381 Features
·VH.V. UP TO 600 V
·SUPPLY VOLTAGE UP TO 17 V
·DRIVER CURRENT CAPABILITY:
SINK CURRENT = 200 mA
SOURCE CURRENT = 100 mA
·UNDER VOLTAGE LOCKOUT WITH HYSTERESIS
·CMOS/LSTTL COMPATIBLE INVERTING INPUT
·dV/dt IMMUNITY ± 50 V/nS IN FULL TEMPERATURE RANGE
·CURRENT MODE CONTROL REFERENCE INPUT
·CURRENT/VOLTAGE MODE OPERATIO (L6380)
·VOLTAGEMODE OPERATION(L6381)
·8 PINS PACKAGE
·SUPPLY VOLTAGE UP TO 17 V
·DRIVER CURRENT CAPABILITY:
SINK CURRENT = 200 mA
SOURCE CURRENT = 100 mA
·UNDER VOLTAGE LOCKOUT WITH HYSTERESIS
·CMOS/LSTTL COMPATIBLE INVERTING INPUT
·dV/dt IMMUNITY ± 50 V/nS IN FULL TEMPERATURE RANGE
·CURRENT MODE CONTROL REFERENCE INPUT
·CURRENT/VOLTAGE MODE OPERATIO (L6380)
·VOLTAGEMODE OPERATION(L6381)
·8 PINS PACKAGE
L6381 Connection Diagram
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