KMZ41, KMZ43T, KMZ51 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SMD8 D/C:SOP-8
KMZ41, KMZ43T, KMZ51 Datasheet download
Part Number: KMZ41
MFG: PHILIPS
Package Cooled: SMD8
D/C: SOP-8
MFG:PHILIPS Package Cooled:SMD8 D/C:SOP-8
KMZ41, KMZ43T, KMZ51 Datasheet download
MFG: PHILIPS
Package Cooled: SMD8
D/C: SOP-8
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Datasheet: KMZ41
File Size: 61591 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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Datasheet: KMZ43T
File Size: 61850 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: KMZ51
File Size: 62608 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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The KMZ41 is a sensitive magnetic field sensor,employing the magnetoresistive effect of thin-film permalloy. The sensor contains two galvanic separated Wheatstone bridges. Its properties enable this sensor to be used in angle measurement applications under strong field conditions. A rotating magnetic field strength > 40 kA/m (recommended field strength > 100 kA/m) in the x-y plane will deliver a sinusoidal output signal. The sensor can be operated at any frequency between DC and 1 MHz.
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personalin jury.Philips Semiconductorscustomersusingorsellingtheseproducts for use in such applications do so at their own risk andagree to fully indemnify Philips Semiconductors for any damages resulting from such application.Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products,conveys no licence or title under any patent, copyright, or mask work right to these products,andmakesnorepresentationsorwarrantiesthat these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
This datasheet contains preliminary data,and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent-or other industrial or intellectual property rights.This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice.
The KMZ43T is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. The sensor contains two galvanic separated Wheatstone bridges, at a relative angle of 45° to one another.
A rotating magnetic field in the x-y plane will produce two independent sinusoidal output signals, one a function of +cos(2a) and the second a function of +sin(2a), a being the angle between sensor and field direction (see Fig.3).
Unlike the KMZ41(1), which needs a saturation field strength of 100 kA/m, the KMZ43T is suited to high precision angle measurement applications under low field conditions (saturation field strength 25 kA/m).
The sensor can be operated at any frequency between DC and 1 MHz.
The information in application notes AN00023 (Contactless Angle Measurement Using KMZ41 and UZZ9000) and AN00004 (Contactless Angle Measurement Using KMZ41 and UZZ9001) is applicable to the KMZ43T, but one should be aware of the difference in the bridge 1 output.
Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will besuitable for the specified use without further testing or modification.
The KMZ51 is an extremely sensitive magnetic field sensor, employing the magnetoresistive effect of thin-filmpermalloy. The sensor contains one magnetoresistive Wheatstone bridge and integrated compensation and set/reset conductors. The integrated compensaion conductor allows magnetic field measurement with current feedback loops to generate an output that is independent of drift in sensitivity. With the integrated set/reset onductor the orientation of sensitivity may be set or changed (flipped). A short current pulse on this conductor is needed to recover (set) the sensor after exposure to strong disturbing magnetic fields. A negative current pulse will reset the sensor to reversed sensitivity. By use of periodically alternated flipping pulses and a lock-in amplifier, output will become independent of sensor and amplifier offset.