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The K6F4008U2E families are fabricated by SAMSUNG's advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.
K6F4008U2E Maximum Ratings
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
VIN,VOUT
-0.5 to VCC+0.3V(Max.3.6V)
V
Voltage on Vcc supply relative to Vss
VCC
-0.3 to 3.6
V
Power Dissipation
PD
1.0
W
Storage temperature
TSTG
-65 to 150
°C
Operating Temperature
TA
-40 to 85
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
K6F4008U2E Features
· Process Technology: Full CMOS · Organization: 512K x8 bit · Power Supply Voltage: 2.7~3.3V · Low Data Retention Voltage: 1.5V(Min) · Three State Outputs · Package Type: 48(36)-TBGA-6.00x7.00