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K4S6432323F-TC60, K4S6432323H-UC60, K4S643232C

Table of contents:
Info of K4S6432323F-TC60
Info of K4S6432323H-UC60
Info of K4S643232C

K4S6432323F-TC60, K4S6432323H-UC60, K4S643232C Selling Leads, Datasheet

MFG:SAMSUNG Package Cooled:TSSOP D/C:0331+

K4S6432323F-TC60, K4S6432323H-UC60, K4S643232C Picture

K4S6432323F-TC60, K4S6432323H-UC60, K4S643232C Datasheet download

Five Points

Part Number: K4S6432323F-TC60

MFG: SAMSUNG

Package Cooled: TSSOP

D/C: 0331+

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K4S643232C General Description

The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNGs high performance CMOS technol-ogy. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

K4S643232C Maximum Ratings

Parameter	Symbol	Value	Unit
Voltage on any pin relative to Vss	V_IN, V_OUT	-1.0 ~ 4.6	V
Voltage on VDD supply relative to Vss	V_DD, V_DDQ	-1.0 ~ 4.6	V
Storage temperature	T_STG	-55 ~ +150	C
Power dissipation	P_D	1	W
Short circuit current	I_OS	50	mA

K4S643232C Features

* 3.3V power supply
*   LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs
     -. CAS latency (2 & 3)
     -. Burst length (1, 2, 4, 8 & Full page)
     -. Burst type (Sequential & Interleave)
*   All inputs are sampled at the positive going edge of the system clock
* Burst read single-bit write operation
*  DQM for masking
* Auto & self refresh
*  15.6us refresh duty cycle

K4S643232C Connection Diagram

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