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K4S561632F-UL75, K4S561632H, K4S561632H-TC750

K4S561632F-UL75, K4S561632H, K4S561632H-TC750 Selling Leads, Datasheet

MFG:SAMSUNG  Package Cooled:TSOP  D/C:07+

K4S561632F-UL75, K4S561632H, K4S561632H-TC750 Picture

K4S561632F-UL75, K4S561632H, K4S561632H-TC750 Datasheet download

Five Points

Part Number: K4S561632F-UL75

 

MFG: SAMSUNG

Package Cooled: TSOP

D/C: 07+

 

 

 
 
 
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  • K4S161622D-TC60

  • Vendor: SAMES D/C: 02+& Qty: 1998  Adddate: 2024-11-27
  • Inquire Now
  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)

About K4S160822D

PDF/DataSheet Download

Datasheet: K4S160822D

File Size: 1211444 KB

Manufacturer: SAMSUNG [Samsung semiconductor]

Download : Click here to Download

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K4S561632H Suppliers

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  • K4S561632H-UC75

  • Vendor: SAMES Pack: SOP D/C: 10+& Qty: 10000 Note: our new and original stock in China  Adddate: 2024-11-27
  • Inquire Now
  • shanghhai xinshen   China
    Contact: Mr.Mrliu   MSN:ldstar8@msn.com
    Tel: 0086-0755-18955684138
    Fax: 0086-0755-22142437
    (22)

About K4S561632H

PDF/DataSheet Download

Datasheet: K4S561632H

File Size: 204051 KB

Manufacturer: Samsung

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K4S561632H-TC750 Suppliers

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  • K4S161622D-TC60

  • Vendor: SAMES D/C: 02+& Qty: 1998  Adddate: 2024-11-27
  • Inquire Now
  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)

About K4S160822D

PDF/DataSheet Download

Datasheet: K4S160822D

File Size: 1211444 KB

Manufacturer: SAMSUNG [Samsung semiconductor]

Download : Click here to Download

Related PDF Download

Related Part Number

K4S561632H General Description

The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

 

K4S561632H Maximum Ratings

Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 V
Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 V
Storage temperature TSTG -55 ~ +150 °C
Power dissipation PD 1 W
Short circuit current IOS 50 mA

Note :Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

K4S561632H Features

• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
  -. CAS latency (2 & 3)
  -. Burst length (1, 2, 4, 8 & Full page)
  -. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (8K Cycle)
• Pb/Pb-free Package
• RoHS compliant for Pb-free Package

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