K1S3216BCC, K1S3216BCD, K1S3216BCD-FI70 Selling Leads, Datasheet
MFG:SAMSUNG D/C:09+
K1S3216BCC, K1S3216BCD, K1S3216BCD-FI70 Datasheet download
Part Number: K1S3216BCC
MFG: SAMSUNG
Package Cooled:
D/C: 09+
MFG:SAMSUNG D/C:09+
K1S3216BCC, K1S3216BCD, K1S3216BCD-FI70 Datasheet download
MFG: SAMSUNG
Package Cooled:
D/C: 09+
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PDF/DataSheet Download
Datasheet: K1S161611A
File Size: 183832 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: K1S3216BCD
File Size: 172420 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: K1S161611A
File Size: 183832 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
The K1S3216BCD is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
Item | Symbol | Ratings | Unit |
Voltage on any pin relative to Vss | VIN, VOUT | -0.2 to VCC+0.3V | V |
Voltage on Vcc supply relative to Vss | VCC | -0.2 to 2.5V | V |
Power Dissipation | PD | 1.0 | W |
Storage temperature | TSTG | -65 to 150 | °C |
Operating Temperature | TA | -40 to 85 | °C |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reliability.