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JDV2S10S, JDV2S10S(TPH3), JDV2S13FS

JDV2S10S, JDV2S10S(TPH3), JDV2S13FS Selling Leads, Datasheet

MFG:TOSHIBA  Package Cooled:SOD-423  D/C:05+

JDV2S10S, JDV2S10S(TPH3), JDV2S13FS Picture

JDV2S10S, JDV2S10S(TPH3), JDV2S13FS Datasheet download

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Part Number: JDV2S10S

 

MFG: TOSHIBA

Package Cooled: SOD-423

D/C: 05+

 

 

 
 
 
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About JDV2S10S

PDF/DataSheet Download

Datasheet: JDV2S10S

File Size: 69452 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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JDV2S10S(TPH3) Suppliers

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About JDV2S01E

PDF/DataSheet Download

Datasheet: JDV2S01E

File Size: 89948 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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About JDV2S01E

PDF/DataSheet Download

Datasheet: JDV2S01E

File Size: 89948 KB

Manufacturer: TOSHIBA [Toshiba Semiconductor]

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JDV2S10S Maximum Ratings

Characteristics Symbol Rating Unit
Reverse voltage VR 10 V
Junction temperature Tj 150 °C
Storage temperature range Tstg -55~125 °C

JDV2S10S Features

`High Capacitance Ratio : C0.5V/C2.5V = 2.5 (typ.)
`Low Series Resistance : rs = 0.35 (typ.)
`This device is suitable for use in a small-size tuner.

JDV2S13FS Maximum Ratings

Characteristic Symbol Rating Unit
Reverse voltage VR 10 V
Junction temperature Tj 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

JDV2S13FS Features

• High capacitance ratio: C1V/C4V = 2.8 (typ.)
• Low series resistance: rs = 0.55 (typ.)
• This device is suitable for use in a small-size tuner.

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