Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
The ISL9V5036S3ST, ISL9V5036P3, and ISL9V5036S3 are the next generation IGBTs that offer outstanding SCIS capability in the D²- Pak (TO-263) and TO-220 plastic package. These devices are intended for use in automotive ignition circuits, specifically as coil drivers. Internal diodes provide voltage clamping without the need for external components.
ISL9V5036S3ST Maximum Ratings
Symbol
Parameter
Ratings
Units
BVCER
Collector to Emitter Breakdown Voltage (IC = 1 mA)
390
V
BVECS
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
24
V
ESCIS25
At Starting TJ = 25°C, ISCIS = 38.5A, L = 670 Hy
500
mJ
ESCIS150
At Starting TJ = 150°C, ISCIS = 30A, L = 670 Hy
300
mJ
IC25
Collector Current Continuous, At TC = 25°C, See Fig 9
46
A
IC110
Collector Current Continuous, At TC = 110°C, See Fig 9
31
A
VGEM
Gate to Emitter Voltage Continuous
±10
V
PD
Power Dissipation Total TC = 25°C
250
W
Power Dissipation Derating TC > 25°C
1.67
W/
TJ
Operating Junction Temperature Range
-40 to 175
TSTG
Storage Junction Temperature Range
-40 to 175
TL
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
300
Tpkg
Max Lead Temp for Soldering (Package Body for 10s)
260
ESD
Electrostatic Discharge Voltage at 100pF, 1500
4
kV
ISL9V5036S3ST Features
• Industry Standard D2-Pak package • SCIS Energy = 500mJ at TJ = 25oC • Logic Level Gate Drive