MFG:Fairchild Optoelectronics Group Category:Discrete Semiconductor Products Package Cooled:SOT-263 D/C:2009+
ISL9N322AP3_NL, ISL9N703OBL3ST, ISL9R1560G2 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Optoelectronics Group
Package Cooled: SOT-263
D/C: 2009+
Description: DIODE STEALTH 600V 15A TO-247
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PDF/DataSheet Download
Datasheet: ISL12026
File Size: 465643 KB
Manufacturer: INTERSIL
Download : Click here to Download
PDF/DataSheet Download
Datasheet: ISL12026
File Size: 465643 KB
Manufacturer: INTERSIL
Download : Click here to Download
PDF/DataSheet Download
Datasheet: ISL9R1560G2
File Size: 171097 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | ISL9R1560G2 |
| Vendor | Fairchild Optoelectronics Group |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 15A |
| Voltage - Forward (Vf) (Max) @ If | 2.2V @ 15A |
| Reverse Recovery Time (trr) | 40ns |
| Current - Reverse Leakage @ Vr | 100A @ 600V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Radial |
| Package / Case | TO-247 |
| Packaging | Tube |
| Capacitance @ Vr, F | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | ISL9R1560G2 ISL9R1560G2 |
The ISL9R1560G2, ISL9R1560P2, ISL9R1560S2 and ISL9R1560S3S are Stealth™ diodes optimized for low loss
performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost diode in power supplies and other power switching
applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may e operated without the use of additional snubber circuitry. onsider using the Stealth™ diode with an SMPS IGBT to rovide the most efficient and highest power density design at ower cost.
Formerly developmental type TA49410.
| Symbol | Parameter | Ratings | Units |
| VRRM | Repetitive Reverse Voltage | 600 | V |
| VRWM | Working Peak Reverse Voltage | 600 | V |
| VR | DC Blocking Voltage | 600 | V |
| IF(AV) | Average Rectified Forward Current (TC = 145oC) Total Device Current (Both Legs) |
15 | A |
| IFRM | Repetitive Peak Surge Current (20kHz Square Wave) | 30 | A |
| IFSM | Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) | 200 | A |
| PD | Power Dissipation | 150 | W |
| EAVL | Avalanche Energy (1A, 40mH) | 20 | mJ |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to 175 | °C |
| TL TPKG |
Maximum Temperature for Soldering |
300 260 |
°C °C |
Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and peration of the device at these or any other conditions above those indicated in the perational sections of this specification is not implied.
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