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The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16105 ideal for use in 16-, 32-bit wide data bus systems.
These features make the IS41C16105 and IS41LV16105 ideally suited for high-bandwidth graphics, digital signal processing, highperformance computing systems, and peripheral applications.
The IS41C16105 and IS41LV16105 are packaged in a 42-pin 400-mil SOJ and 400-mil 44- (50-) pin TSOP (Type II).
IS41C16105 Maximum Ratings
Symbol
Parameters
Rating
Unit
VT
Voltage on Any Pin Relative to GND 5V 3.3V
1.0 to +7.0 0.5 to +4.6
V
VCC
Supply Voltage 5V 3.3V
1.0 to +7.0 0.5 to +4.6
V
IOUT
Output Current
50
mA
PD
Power Dissipation
1
W
TA
Commercial Operation Temperature Extended Temperature Industrial Temperature
0 to +70 30 to +85 40 to +85
TSTG
Storage Temperature
55 to +125
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability .
IS41C16105 Features
• TTL compatible inputs and outputs; tristate I/O • Refresh Interval: - 1,024 cycles/16 ms • Refresh Mode: - RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply: - 5V ± 10% (IS41C16105) - 3.3V ± 10% (IS41LV16105) • Byte Write and Byte Read operation via two CAS • Extended Temperature Range -30 to 85 • Industrail Temperature Range -40 to 85