MFG:International Rectifier Category:Integrated Circuits (ICs) Package Cooled:06+ D/C:04+
IRIPS041L, IRIS/QF01ES, IRIS4007 Datasheet download
Category: Integrated Circuits (ICs)
MFG: International Rectifier
Package Cooled: 06+
D/C: 04+
Description: IC SWITCH PWR 200V 4A TO-220-5
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PDF/DataSheet Download
Datasheet: IRIS4007
File Size: 63724 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRIS4007
File Size: 63724 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRIS4007
File Size: 63724 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRIS4007 |
| Vendor | International Rectifier |
| Category | Integrated Circuits (ICs) |
| Package / Case | TO-220-5 (Straight Leads) |
| Packaging | Tube |
| Type | Voltage and Current Controller |
| Voltage - Input | 10 ~ 16 V |
| Voltage - Output | 200V |
| Number of Outputs | 1 |
| Applications | Controller, ACDC, DCDC Switching Power Supplies |
| Operating Temperature | -20°C ~ 125°C |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRIS4007 IRIS4007 |
The IRIS4007(K) is a dual mode voltage and current controller combined with a MOSFET in a single Package. The IRIS4007(K) are designed for use in AC/DC and DC/DC switching power supplies upto 100VDC nominal input and is capable of 30W for a nominal 48V input. The device can operate in either a quasi-resonant or Pulse Ratio Control (PRC) mode, and thereby variable frequency operation.
| Symbol | Definition | Terminals | Max. Ratings | Units | Note |
| IDpeak | Drain Current *1 | 3-1 | 20 | A | Single Pulse |
| IDMAX | Maximum switching current *5 | 3-1 | 4.0 | A | V2-3=0.78V Ta=-20~+125 |
| EAS | Single pulse avalanche energy *2 | 3-1 | 350 | mJ | VDD=99V, L=20mH ILpeak=2.8A Single Pulse |
| Vin | Input voltage for control part | 4-3 | 35 | V | |
| Vth | O.C.P/F.B Pin voltage | 5-2 | 6 | V | |
| PD1 | Power dissipation for MOSFET *3 | 3-1 | 73 | W | With infintite heatsink |
| 1.27 | W | Without heatsink | |||
| PD2 | Power dissipation for control part | 4-2 | 0.8 | W | Specified by Vin*Iin |
| (Control IC) *4 | |||||
| TF | Internal frame temperature | - | -40 ~ +125 | Refer to recommended | |
| in operation | operating temperature | ||||
| Top | Operating ambient temperature | - | -40 ~ +125 | ||
| Tstg | Storage temperature | - | -20 ~ +125 | ||
| Tch | Channel temperature | - | 300 |
• Primary current mode control, and secondary voltage mode control
• Vcc over-voltage protection (latched)
• Over-current and over-temperature protection
• Quasi resonant, variable frequency operation
• 5 pin TO-220 and TO-262 package
• 0.4Ω Rds(on) max/ 200V MOSFET
• Fully Characterized Avalanche Energy
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