IRGPH50, IRGPH50F, IRGPH50S Selling Leads, Datasheet
MFG:IR Package Cooled:09+ D/C:TO
IRGPH50, IRGPH50F, IRGPH50S Datasheet download
Part Number: IRGPH50
MFG: IR
Package Cooled: 09+
D/C: TO
IRGPH50, IRGPH50F, IRGPH50S
- Table of contents:
Info of IRGPH50
Info of IRGPH50F
Info of IRGPH50S
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About IRGPH50
PDF/DataSheet Download
Datasheet: IRGPH50
File Size: 273715 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRGPH50F
PDF/DataSheet Download
Datasheet: IRGPH50F
File Size: 273715 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRGPH50S
PDF/DataSheet Download
Datasheet: IRGPH50S
File Size: 99174 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRGPH50F General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
IRGPH50F Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 1200 | V |
| IC @ TC = 25°C | Continuous Collector Current | 45 | A |
| IC @ TC = 100°C | Continuous Collector Current | 25 | A |
| ICM | Pulsed Collector Current | 90 | A |
| ILM | Clamped Inductive Load Current | 90 | A |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| EARV | Reverse Voltage Avalanche Energy | 20 | mJ |
| PD @ TC = 25°C | Maximum Power Dissipation | 200 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 78 | W |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Operating Junction and Storage Temperature Range |
300 (0.063 in. (1.6mm) from case) | °C | |
| Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |
IRGPH50F Features
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
IRGPH50S General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
IRGPH50S Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 1200 | V |
| IC @ TC = 25°C | Continuous Collector Current | 57 | A |
| IC @ TC = 100°C | Continuous Collector Current | 33 | A |
| ICM | Pulsed Collector Current | 110 | A |
| ILM | Clamped Inductive Load Current | 110 | A |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| EARV | Reverse Voltage Avalanche Energy | 20 | mJ |
| PD @ TC = 25°C | Maximum Power Dissipation | 200 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 78 | W |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Operating Junction and Storage Temperature Range |
300 (0.063 in. (1.6mm) from case) | °C | |
| Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |
IRGPH50S Features
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve
• Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve
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