IRGPH40KD2-S, IRGPH40S, IRGPH40VD Selling Leads, Datasheet
MFG:IR Package Cooled:N/A D/C:100
IRGPH40KD2-S, IRGPH40S, IRGPH40VD Datasheet download
Part Number: IRGPH40KD2-S
MFG: IR
Package Cooled: N/A
D/C: 100
IRGPH40KD2-S, IRGPH40S, IRGPH40VD
- Table of contents:
Info of IRGPH40KD2-S
Info of IRGPH40S
Info of IRGPH40VD
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About IRG4BAC50S
PDF/DataSheet Download
Datasheet: IRG4BAC50S
File Size: 138592 KB
Manufacturer:
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About IRGPH40S
PDF/DataSheet Download
Datasheet: IRGPH40S
File Size: 84903 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRG4BAC50S
PDF/DataSheet Download
Datasheet: IRG4BAC50S
File Size: 138592 KB
Manufacturer:
Download : Click here to Download
IRGPH40S General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
IRGPH40S Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 1200 | V |
| IC @ TC = 25°C | Continuous Collector Current | 33 | A |
| IC @ TC = 100°C | Continuous Collector Current | 20 | A |
| ICM | Pulsed Collector Current | 66 | A |
| ILM | Clamped Inductive Load Current | 66 | A |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| EARV | Reverse Voltage Avalanche Energy | 15 | mJ |
| PD @ TC = 25°C | Maximum Power Dissipation | 160 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 65 | W |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Operating Junction and Storage Temperature Range |
300 (0.063 in. (1.6mm) from case) | °C | |
| Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |
IRGPH40S Features
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400Hz)
• Optimized for line frequency operation (to 400Hz)
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