IRGPF40F, IRGPF50F, IRGPF50FD2 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-3P D/C:03+
IRGPF40F, IRGPF50F, IRGPF50FD2 Datasheet download
Part Number: IRGPF40F
MFG: IR
Package Cooled: TO-3P
D/C: 03+
IRGPF40F, IRGPF50F, IRGPF50FD2
- Table of contents:
Info of IRGPF40F
Info of IRGPF50F
Info of IRGPF50FD2
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About IRGPF40F
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Datasheet: IRGPF40F
File Size: 110962 KB
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About IRGPF50F
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Datasheet: IRGPF50F
File Size: 112760 KB
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About IRG4BAC50S
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Datasheet: IRG4BAC50S
File Size: 138592 KB
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IRGPF40F General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
IRGPF40F Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 900 | V |
| IC @ TC = 25°C | Continuous Collector Current | 31 | A |
| IC @ TC = 100°C | Continuous Collector Current | 17 | A |
| ICM | Pulsed Collector Current | 62 | A |
| ILM | Clamped Inductive Load Current | 62 | A |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| EARV | Reverse Voltage Avalanche Energy | 15 | mJ |
| PD @ TC = 25°C | Maximum Power Dissipation | 160 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 65 | W |
| TJ TSTG | Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | °C | |
| Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
IRGPF40F Features
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
IRGPF50F General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
IRGPF50F Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 900 | V |
| IC @ TC = 25°C | Continuous Collector Current | 51 | A |
| IC @ TC = 100°C | Continuous Collector Current | 28 | A |
| ICM | Pulsed Collector Current | 100 | A |
| ILM | Clamped Inductive Load Current | 100 | A |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| EARV | Reverse Voltage Avalanche Energy | 20 | mJ |
| PD @ TC = 25°C | Maximum Power Dissipation | 200 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 78 | W |
| TJ TSTG | Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | °C | |
| Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
IRGPF50F Features
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
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