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IRGP4055DPBF, IRGP4062DPBF, IRGP4063DPBF

Table of contents:
Info of IRGP4055DPBF
Info of IRGP4062DPBF
Info of IRGP4063DPBF

IRGP4055DPBF, IRGP4062DPBF, IRGP4063DPBF Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-247AC D/C:07+pbfree

IRGP4055DPBF, IRGP4062DPBF, IRGP4063DPBF Datasheet download

Five Points

Part Number: IRGP4055DPBF

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: TO-247AC

D/C: 07+pbfree

Description: IGBT PDP N-CH 600V 96A TO-247AC

Price Break

1
10
100
1000

Unit Price

10.74000
7.85500
6.50710
5.69902

Extended Price

10.74
78.55
650.71
5699.02

(All prices are in USD) Prices for reference only

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IRGP4055DPBF Parameters

Technical/Catalog Information	IRGP4055DPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	300V
Current - Collector (Ic) (Max)	110A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 110A
Power - Max	255W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Bag
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGP4055DPBF IRGP4055DPBF

IRGP4055DPBF General Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSE TM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.

IRGP4055DPBF Maximum Ratings

	Parameter	Max.	Units
V_GE	Gate-to-Emitter Voltage	±30	V
I_C @ T_c = 25	Continuous Drain Current, VGE @ 15V	110	A
I_C @ Tc = 100	Continuous Collector, VGE @ 15V	60
IRP @ T_c = 25	Repetitive Peak Current	270
P_D @T_c= 25	Power Dissipation	255	W
I_D @ T_c = 100	Power Dissipation	102	W
	Linear Derating Factor	2.04	W/
T_J T_STG	Operating Junction and Storage Temperature Range	-40 to + 150
	Soldering Temperature, for 10 seconds	300
	Mounting Torque, 6-32 or M3 Screw	10lb`in (1.1N`m)	N

IRGP4055DPBF Features

· Advanced Trench IGBT Technology
· Optimized for Sustain and Energy Recovery circuits in PDP applications
· Low VCE(on) and Energy per Pulse (EPULSE^TM) for improved panel efficiency
· High repetitive peak current capability
· Lead Free package

IRGP4062DPBF Parameters

Technical/Catalog Information	IRGP4062DPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	48A
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 24A
Power - Max	250W
Mounting Type	Through Hole
Package / Case	-
Packaging	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGP4062DPBF IRGP4062DPBF

IRGP4063DPBF Parameters

Technical/Catalog Information	IRGP4063DPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	96A
Vce(on) (Max) @ Vge, Ic	2.14V @ 15V, 48A
Power - Max	330W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Bag
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGP4063DPBF IRGP4063DPBF

IRGP4063DPBF Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C @ T_C = 25	Continuous Collector Current	96	A
I_C @ T_C= 100	Continuous Collector Current	48
I_CM	Pulse Collector Current	192
I_LM	Clamped Inductive Load Current	192
I_F@ T_C = 25	Diode Continous Forward Current	96
I_F@ T_C = 100	Diode Continous Forward Current	48
I_FRM	Diode Maximum Forward Current	192
V_GE	Continuous Gate-to-Emitter Voltage	±20	V
V_GE	Transient Gate-to-Emitter Voltage	±30	V
P_D@ T_C = 25	Maximum Power Dissipation	330	W
P_D@ T_C = 100	Maximum Power Dissipation	170	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting Torque, 6-32 or M3 Screw	10 lbf`in (1.1 N`m)

IRGP4063DPBF Features

• Low V_{CE (ON)} Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175
• 5 S short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package

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