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IRGP35B60PD, IRGP35B60PDPBF, IRGP4050

Table of contents:
Info of IRGP35B60PD
Info of IRGP35B60PDPBF
Info of IRGP4050

IRGP35B60PD, IRGP35B60PDPBF, IRGP4050 Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:05+

IRGP35B60PD, IRGP35B60PDPBF, IRGP4050 Datasheet download

Five Points

Part Number: IRGP35B60PDPBF

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: TO-3P

D/C: 05+

Description: IGBT W/DIODE 600V 60A TO247AC

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IRGP35B60PD Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C @ T_C = 25°C	Continuous Collector Current	60	A
I_C @ T_C = 100°C	Continuous Collector Current	34
I_CM	Pulse Collector Current (Ref. Fig. C.T.4)	120
I_LM	Clamped Inductive Load Current	120
I_F @ T_C = 25°C	Diode Continous Forward Current	40
I_F @ T_C = 100°C	Diode Continous Forward Current	15
I_FRM	Maximum Repetitive Forward Current	60
V_GE	Gate-to-Emitter Voltage	±20	V
P_D @ T_C = 25°C	Maximum Power Dissipation	308	W
P_D @ T_C = 100°C	Maximum Power Dissipation	123	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to +150	°C
	Soldering Temperature for 10 sec.	300 (0.063 in. (1.6mm) from case)	°C
	Mounting Torque, 6-32 or M3 Screw	10 lbf·in (1.1 N·m)

IRGP35B60PD Features

• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability

IRGP35B60PD Typical Application

• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies

IRGP35B60PDPBF Parameters

Technical/Catalog Information	IRGP35B60PDPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	60A
Vce(on) (Max) @ Vge, Ic	2.55V @ 15V, 35A
Power - Max	308W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AD, Straight Leads)
Packaging	Bag
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGP35B60PDPBF IRGP35B60PDPBF

IRGP4050 General Description

This IGBT is specifically designed for sustain & energy recovery application in plasma display panels. This IGBT features low V_{CE (ON)} and fast switching times to improve circuit efficiency and reliability. Low temperature co-efficient of V_{CE (ON)} makes this IGBT an ideal device for PDP sustain driver application.

IRGP4050 Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	250	V
I_C @ T_C = 25	Continuous Collector Current	104*	A
I_C @ T_C = 100	Continuous Collector Current	56
I_CM	Pulse Collector Current	208
I_CM	Clamped Inductive Load current	290
V_GE	Gate-to-Emitter Voltage	±20	V
E_ARV	Reverse Voltage Avalanche Energy	1240	mJ
P_D @ T_C = 25	Maximum Power Dissipation	330	W
P_D @ T_C = 100	Maximum Power Dissipation	130	W
T_J,T_STG	Operating Junction and Storage Temperature Range	-55 to +150
	Solder Temperature Range, for 10 sec.	300 (0.063 in. (1.6mm) from case)

IRGP4050 Features

·Key parameters optimized for PDP sustain & Energy recovery applications
· 104A continuous collector current rating reduces component count
·High pulse current rating makes it ideal for capacitive load circuits
·Low temperature co-efficient of V_{CE (ON)} ensures reduced power
dissipation at operating junction temperatures
·Reverse voltage avalanche rating improves the robustness in sustain driver application
·Short fall & rise times for fast switching

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