MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:09+ D/C:441
IRGP30B120KD-E, IRGP30B120KD-EP, IRGP30B120UD-E Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: 09+
D/C: 441
Description: IGBT W/DIODE 1200V 60A TO247AD
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PDF/DataSheet Download
Datasheet: IRG4BAC50S
File Size: 138592 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRG4BAC50S
File Size: 138592 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRG4BAC50S
File Size: 138592 KB
Manufacturer:
Download : Click here to Download
| Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Breakdown Voltage |
1200 |
V |
| IC @ TC = 25 | Continuous Collector Current (Fig.1) |
60 |
V |
| IC @ TC = 100 | Continuous Collector Current (Fig.1) |
30 | |
| ICM | Pulsed Collector Current (Fig.3, Fig. CT.5) |
120 | |
| ILM | Clamped Inductive Load Current(Fig.4, Fig. CT.2) |
120 | |
| IF @ TC = 100 | Diode Continuous Forward Current |
30 | |
| IFM | Diode Maximum Forward Current |
120 | |
| VGE | Gate-to-Emitter Voltage |
± 20 |
|
| PD @ TC = 25 | Maximum Power Dissipation (Fig.2) |
300 |
W |
| PD @ TC = 100 | Maximum Power Dissipation (Fig.2) |
120 | |
| TJ,TSTG | Operating Junction and Storage Temperature Range |
-55 to + 150 |
|
| Soldering Temperature, for 10 seconds |
300, (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
| Technical/Catalog Information | IRGP30B120KD-EP |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 60A |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 60A |
| Power - Max | 300W |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 (TO-247AD, Straight Leads) |
| Packaging | Bag |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGP30B120KD EP IRGP30B120KDEP |
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Breakdown Voltage | 1200 | V |
| IC @ TC = 25°C | Continuous Collector Current (Fig.1) | 60 | A |
| IC @ TC = 100°C | Continuous Collector Current (Fig.1) | 30 | |
| ICM | Pulsed Collector Current (Fig.3, Fig. CT.5) | 120 | |
| ILM | Clamped Inductive Load Current(Fig.4, Fig. CT.2) | 120 | |
| IF @ TC = 100°C | Diode Continuous Forward Current | 30 | |
| IFM | Diode Maximum Forward Current | 120 | |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| PD @ TC = 25°C | Maximum Power Dissipation (Fig.2) | 300 | W |
| PD @ TC = 100°C | Maximum Power Dissipation (Fig.2) | 120 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | °C |
| Soldering Temperature, for 10 seconds | 300, (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
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