IRGH40K, IRGIB10B60KD1, IRGIB15B60KD1 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-247-3 D/C:05+
IRGH40K, IRGIB10B60KD1, IRGIB15B60KD1 Datasheet download
Part Number: IRGH40K
MFG: IR
Package Cooled: TO-247-3
D/C: 05+
IRGH40K, IRGIB10B60KD1, IRGIB15B60KD1
- Table of contents:
Info of IRGH40K
Info of IRGIB10B60KD1
Info of IRGIB15B60KD1
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About IRG4BAC50S
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Datasheet: IRG4BAC50S
File Size: 138592 KB
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About IRGIB10B60KD1
PDF/DataSheet Download
Datasheet: IRGIB10B60KD1
File Size: 395464 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRGIB15B60KD1
PDF/DataSheet Download
Datasheet: IRGIB15B60KD1
File Size: 294035 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRGIB10B60KD1 Maximum Ratings
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25 | Continuous Collector Current |
16 |
A |
| IC @ TC = 100 | Continuous Collector Current |
10 | |
| ICM | Pulse Collector Current (Ref.Fig.C.T.5) |
32 | |
| ILM | Clamped Inductive Load current |
32 | |
| IF @ TC = 25 | Clamped Inductive Load current |
16 | |
| IF @ TC = 100 | Diode Continuous Forward Current |
10 | |
| IFM | Diode Maximum Forward Current |
32 | |
| VISOL | RMS Isolation Voltage, Terminal to Case, t = 1 min |
2500 |
V |
| VGE | Gate-to-Emitter Voltage |
±20 | |
| PD @ TC = 25 | Maximum Power Dissipation |
44 |
W |
| PD @ TC = 100 | Maximum Power Dissipation |
22 | |
| TJ | Operating Junction and -55 to +175 TSTG Storage Temperature Range |
-55 to +175 |
|
| TSTG | |||
| Soldering Temperature for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw |
10 lbf.in (1.1N.m) |
IRGIB10B60KD1 Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175
IRGIB15B60KD1 Maximum Ratings
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC=25 | Continuous Collector Current |
19 |
A |
| IC @ TC=100 | Continuous Collector Current |
12 | |
| ICM | Pulse Collector Current (Ref.Fig.C.T.5) |
38 | |
| ILM | Clamped Inductive Load current |
38 | |
| IF @ TC=25 | Diode Continuous Forward Current |
19 | |
| IF @ TC=100 | Diode Continuous Forward Current |
12 | |
| IFM | Diode Maximum Forward Current |
38 | |
| VISOL | RMS Isolation Voltage, Terminal to Case,t=1 min |
2500 |
V |
| VGE | Gate-to-Emitter Voltage |
±20 | |
| PD @ TC=25 | Maximum Power Dissipation |
52 |
W |
| PD @ TC=100 | Maximum Power Dissipation |
26 | |
| TJ TSTG | Operating Junction and Storage Temperature Range |
-55 to +175 |
|
| Soldering Temperature for 10 sec. |
300(0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw |
10 lbf.in (1.1N.m) |
IRGIB15B60KD1 Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175
• Low Diode VF.
• 10s Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175
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