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IRGCH40SE, IRGCH50FE, IRGCH50KE

Table of contents:
Info of IRGCH40SE
Info of IRGCH50FE
Info of IRGCH50KE

IRGCH40SE, IRGCH50FE, IRGCH50KE Selling Leads, Datasheet

MFG:IR Package Cooled:N/A D/C:2010+

IRGCH40SE, IRGCH50FE, IRGCH50KE Datasheet download

Five Points

Part Number: IRGCH40SE

MFG: IR

Package Cooled: N/A

D/C: 2010+

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Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

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IRGCH50FE General Description

IRGCH50FE is a kind of IGBT die in wafer form.

What comes next is about the electrical characteristics (wafer form). The maximum VCE (on) (Collector-to-Emitter Saturation Voltage) is 3.5 V at IC=20 A, TJ=25, VGE=15 V. The minimum V(BR)CES (Colletor-to-Emitter Breakdown Voltage) is 1200 V at TJ=25, ICES=250A, VGE=0 V. The minimum VGE(th) (Gate Threshold Voltage) is 3.0 V and the maximum is 5.5 V at VGE=VCE, TJ=25, IC=250A. The maximum ICES (Zero Gate Voltage Collector Current) is 250A at TJ=25, VCE=1200 V. The maximum IGES (Gate-to-Emitter Leakage Current) is ± 500 nA at TJ=25, VGE=±20 V.

There is not much information about the product now. Please pay attention to our website and we will update it timely.

IRGCH50FE Maximum Ratings

IRGCH50FE Features

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