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IRGCC50ME, IRGCH20SE, IRGCH40KE

Table of contents:
Info of IRGCC50ME
Info of IRGCH20SE
Info of IRGCH40KE

IRGCC50ME, IRGCH20SE, IRGCH40KE Selling Leads, Datasheet

MFG:IR Package Cooled:N/A D/C:2010+

IRGCC50ME, IRGCH20SE, IRGCH40KE Datasheet download

Five Points

Part Number: IRGCC50ME

MFG: IR

Package Cooled: N/A

D/C: 2010+

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IRGCC50ME General Description

IRGCC50ME is a kind of IGBT die in wafer form.

What comes next is about the electrical characteristics (wafer form). The maximum VCE (on) (Collector-to-Emitter Saturation Voltage) is 2.5 V at IC=20 A, TJ=25, VGE=15 V. The minimum V(BR)CES (Colletor-to-Emitter Breakdown Voltage) is 600 V at TJ=25, ICES=250A, VGE=0 V. The minimum VGE(th) (Gate Threshold Voltage) is 3.0 V and the maximum is 5.5 V at VGE=VCE, TJ=25, IC=250A. The maximum ICES (Zero Gate Voltage Collector Current) is 250A at TJ=25, VCE=600 V. The maximum IGES (Gate-to-Emitter Leakage Current) is ± 500 nA at TJ=25, VGE=±20 V.

There is not much information about the product now. Please pay attention to our website and we will update it timely.

IRGCC50ME Maximum Ratings

IRGCC50ME Features

IRGCH20SE General Description

IRGCH20SE is a kind of IGBT die in wafer form.

What comes next is about the electrical characteristics (wafer form). The maximum VCE (on) (Collector-to-Emitter Saturation Voltage) is 3.3 V at IC=20 A, TJ=25, VGE=15 V. The minimum V(BR)CES (Colletor-to-Emitter Breakdown Voltage) is 1200 V at TJ=25, ICES=250A, VGE=0 V. The minimum VGE(th) (Gate Threshold Voltage) is 3.0 V and the maximum is 5.5 V at VGE=VCE, TJ=25, IC=250A. The maximum ICES (Zero Gate Voltage Collector Current) is 250A at TJ=25, VCE=1200 V. The maximum IGES (Gate-to-Emitter Leakage Current) is ± 500 nA at TJ=25, VGE=±20 V.

There is not much information about the product now. Please pay attention to our website and we will update it timely.

IRGCH20SE Maximum Ratings

IRGCH20SE Features

IRGCH40KE General Description

IRGCH40KE is a kind of IGBT die in wafer form.

What comes next is about the electrical characteristics (wafer form). The maximum VCE (on) (Collector-to-Emitter Saturation Voltage) is 3.8 V at IC=10 A, TJ=25, VGE=15 V. The minimum V(BR)CES (Colletor-to-Emitter Breakdown Voltage) is 1200 V at TJ=25, ICES=250A, VGE=0 V. The minimum VGE(th) (Gate Threshold Voltage) is 3.0 V and the maximum is 6.0 V at VGE=VCE, TJ=25, IC=250A. The maximum ICES (Zero Gate Voltage Collector Current) is 250A at TJ=25, VCE=1200 V. The maximum IGES (Gate-to-Emitter Leakage Current) is ± 500 nA at TJ=25, VGE=±20 V.

There is not much information about the product now. Please pay attention to our website and we will update it timely.

IRGCH40KE Maximum Ratings

IRGCH40KE Features

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