IRGBC40K-S, IRGBC40M, IRGBC40M-S Selling Leads, Datasheet
MFG:IR Package Cooled:TO-263 D/C:06+
IRGBC40K-S, IRGBC40M, IRGBC40M-S Datasheet download
Part Number: IRGBC40K-S
MFG: IR
Package Cooled: TO-263
D/C: 06+
IRGBC40K-S, IRGBC40M, IRGBC40M-S
- Table of contents:
Info of IRGBC40K-S
Info of IRGBC40M
Info of IRGBC40M-S
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About IRGBC40K-S
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Datasheet: IRGBC40K-S
File Size: 115819 KB
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About IRGBC40M
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Datasheet: IRGBC40M
File Size: 38095 KB
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About IRGBC40M-S
PDF/DataSheet Download
Datasheet: IRGBC40M-S
File Size: 90753 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRGBC40K-S General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors,while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
IRGBC40K-S Maximum Ratings
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
42 |
A |
| IC @ TC = 100°C | Continuous Collector Current |
25 | |
| ICM | Pulsed Collector Current |
84 | |
| ILM | Clamped Inductive Load Current |
84 | |
| tsc | Short Circuit Withstand Time |
10 |
s |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| EARV | Reverse Voltage Avalanche Energy |
15 |
mJ |
| PD @ TC = 25°C | Maximum Power Dissipation |
160 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
65 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
| Soldering Temperature, for 10 seconds |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
|
Parameter |
Typ. |
Max. |
Units | |
| RJC | Junction-to-Case |
- |
0.77 |
°C/W |
| RJA | Junction-to-Ambient, (PCB Mount)** |
- |
40 | |
| RJA | Junction-to-Ambient, typical socket mount |
- |
80 | |
| Wt | Weight |
2.0 (0.07) |
- |
g(oz) |
IRGBC40K-S Features
• Short circuit rated - 10s @ 125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
IRGBC40M General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. Description
IRGBC40M Maximum Ratings
|
Parameter |
Max. |
Units | |
|
Collector-to-Emitter Voltage |
V DSS |
600 |
A
|
|
Continuous Drain Current |
I D |
40 | |
|
Power Dissipation |
I DM |
24 | |
|
Clamped Inductive Load Current |
P D |
80 |
Ω |
|
Short Circuit Withstand Time |
R DS(ON) |
80 |
W/K ? |
|
Gate-to-Emitter Voltage |
C ISS |
10 |
V |
|
Reverse Voltage Avalanche Energy |
Q g |
15 |
mJmW |
|
Maximum Power Dissipation |
t td(on) |
96g |
ns |
|
Operating Junction and Storage Temperature Range |
t tr |
-55 to +150 | |
|
TurnOff Delay Time |
t td(off) |
50 | |
|
Fall Time |
t f |
IRGBC40M Features
• Short circuit rated - 10µs @ 125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz)
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz)
IRGBC40M-S General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
IRGBC40M-S Maximum Ratings
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
40 |
A |
| IC @ TC =100°C | Continuous Collector Current |
24 | |
| ICM | Pulsed Collector Current |
80 | |
| ILM | Clamped Inductive Load Current |
80 | |
| tsc | Short Circuit Withstand Time |
10 |
s |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| EARV | Reverse Voltage Avalanche Energy |
15 |
mJ |
| PD @ TC = 25°C | Maximum Power Dissipation |
160 |
W |
| PD @ TC =100°C | Maximum Power Dissipation |
65 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 |
°C |
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
IRGBC40M-S Features
• Short circuit rated - 10s @ 125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz)
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz)
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