IRGB420UD2, IRGB430, IRGB430U Selling Leads, Datasheet
MFG:IR Package Cooled:IOR D/C:TO
IRGB420UD2, IRGB430, IRGB430U Datasheet download
Part Number: IRGB420UD2
MFG: IR
Package Cooled: IOR
D/C: TO
IRGB420UD2, IRGB430, IRGB430U
- Table of contents:
Info of IRGB420UD2
Info of IRGB430
Info of IRGB430U
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About IRGB420UD2
PDF/DataSheet Download
Datasheet: IRGB420UD2
File Size: 439247 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRGB430U
PDF/DataSheet Download
Datasheet: IRGB430U
File Size: 106315 KB
Manufacturer:
Download : Click here to Download
About IRGB430U
PDF/DataSheet Download
Datasheet: IRGB430U
File Size: 106315 KB
Manufacturer:
Download : Click here to Download
IRGB420UD2 General Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.
IRGB420UD2 Maximum Ratings
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
500 |
V |
| ID @ TC = 25°C | Continuous Collector Current |
14 |
A |
| ID @ TC = 100°C | Continuous Collector Current |
7.5 | |
| ICM | Pulsed Collector Current |
28 | |
| ILM | Clamped Inductive Load Current |
28 | |
| IF @ TC = 100°C | Diode Continuous Forward Current |
7.0 | |
| IFM | Diode Maximum Forward Current |
28 | |
| VGE | Gate-to-Emitter Voltage |
± 20 |
V |
| PD @TC = 25°C | Max. Power Dissipation |
60 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
24 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C |
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw. |
10 lbf•in (1.1 N•m) |
IRGB420UD2 Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating f requency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating f requency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
IRGB430U General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
IRGB430U Maximum Ratings
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
500 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
25 |
A |
| IC @ TC = 100°C | Continuous Collector Current |
15 | |
| ICM | Pulsed Collector Current |
50 | |
| ILM | Clamped Inductive Load Current |
50 | |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| EARV | Reverse Voltage Avalanche Energy |
10 |
mJ |
| PD @ TC = 25°C | Maximum Power Dissipation |
100 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
42 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
| Soldering Temperature, for 10 seconds |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
|
Parameter |
Typ. |
Max. |
Units | |
| RJC | Junction-to-Case |
- |
1.2 |
°C/W |
| RCS | Case-to-Sink, flat, greased surface |
0.50 |
- | |
| RJA | Junction-to-Ambient, typical socket mount |
- |
80 | |
| Wt | Weight |
2.0 (0.07) |
- |
g(oz) |
IRGB430U Features
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
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