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IRGB20B60PD1, IRGB20B60PD1PBF, IRGB30B60K

Table of contents:
Info of IRGB20B60PD1
Info of IRGB20B60PD1PBF
Info of IRGB30B60K

IRGB20B60PD1, IRGB20B60PD1PBF, IRGB30B60K Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:N/A

IRGB20B60PD1, IRGB20B60PD1PBF, IRGB30B60K Datasheet download

Five Points

Part Number: IRGB20B60PD1PBF

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: TO-220

D/C: N/A

Description: IGBT W/DIODE 600V 40A TO220AB

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IRGB20B60PD1 General Description

•Parallel Operation for Higher Current Applications
•Lower Conduction Losses and Switching Losses
•Higher Switching Frequency up to 150kHz

IRGB20B60PD1 Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_F@ T_C= 25°	CContinuous Collector Current	40	A
I_F@ T_C= 100°	CContinuous Collector Current	22	A
I_CM	Pulsed Collector Current	80	A
I_CM	Clamped Inductive Load Current	80	A
I_F@ T_C= 25°	CDiode Continuous Forward Current	10	A
I_F@ T_C= 100°	CDiode Continuous Forward Current	4	A
L_SM	Diode Maximum Forward Current	16	A
V_GE	Gate-to-Emitter Voltage	± 20	V
P_D@ T_C= 25°	CMaximum Power Dissipation	156	W
P_D@ T_C= 100°	CMaximum Power Dissipation	215	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to +150	°C
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)

IRGB20B60PD1 Features

•NPT Technology, Positive Temperature Coefficient
•Lower VCE(SAT)
•Lower Parasitic Capacitances
•Minimal Tail Current
•HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
•Tighter Distribution of Parameters
•Higher Reliability

IRGB20B60PD1 Typical Application

•Telecom and Server SMPS
•PFC and ZVS SMPS Circuits
•Uninterruptable Power Supplies
•Consumer Electronics Power Supplies

IRGB20B60PD1PBF Parameters

Technical/Catalog Information	IRGB20B60PD1PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	40A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 20A
Power - Max	215W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGB20B60PD1PBF IRGB20B60PD1PBF

IRGB20B60PD1PBF Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600
I_C@ T_C = 25	Continuous Collector Current	40	A
I_C@ T_C = 100	Continuous Collector Current	22
I_CM	Pulse Collector Current (Ref. Fig. C.T.4)	80
I_LM	Clamped Inductive Load Current 􀀀􀀀	80
I_F @ T_C = 25	Diode Continous Forward Current	10
I_F@ T_C= 100	Diode Continous Forward Current	4
I_FRM	Maximum Repetitive Forward Current	16
V_GE	Gate-to-Emitter Voltage	±20	V
P_D @ T_C = 25	Maximum Power Dissipation	215	W
P_D @ T_C = 100	Maximum Power Dissipation	86	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to +150
	Soldering Temperature, for 10 sec.	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf`in (1.1N`m)

IRGB20B60PD1PBF Features

• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability

IRGB20B60PD1PBF Typical Application

• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
• Lead-Free

IRGB30B60K Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C@ T_C= 25°C	Continuous Collector Current	78	A
I_C@ T_C= 100°C	Continuous Collector Current	50
I_CM	Pulse Collector Current(Ref.Fig.C.T.5)	120
I_LM	Clamped Inductive Load current	120
V_ISOL	RMS Isolation Voltage, Terminal to Case, t=1 min.	2500	V
VGE	Gate-to-Emitter Voltage	±20	V
P_D@ T_C = 25°C	Maximum Power Dissipation	370	W
P_D @ T_C = 100°C	Maximum Power Dissipation	180	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to +175	°C
	Soldering Temperature, for 10 sec.	300(0.063 in.(1.6mm)fromcase)	°C
	Mounting Torque, 6-32 or M3 Screw	10 lbf`in (1.1 N`m)

IRGB30B60K Features

• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.

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