IRG4ZC50KD, IRG4ZH70UD, IRG4ZH71KD Selling Leads, Datasheet
MFG:IR
IRG4ZC50KD, IRG4ZH70UD, IRG4ZH71KD Datasheet download
Part Number: IRG4ZC50KD
MFG: IR
Package Cooled:
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IRG4ZC50KD, IRG4ZH70UD, IRG4ZH71KD
- Table of contents:
Info of IRG4ZC50KD
Info of IRG4ZH70UD
Info of IRG4ZH71KD
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About IRG4BAC50S
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Datasheet: IRG4BAC50S
File Size: 138592 KB
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About IRG4ZH70UD
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Datasheet: IRG4ZH70UD
File Size: 238831 KB
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About IRG4ZH71KD
PDF/DataSheet Download
Datasheet: IRG4ZH71KD
File Size: 239850 KB
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IRG4ZH70UD Maximum Ratings
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Breakdown Voltage |
1200 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
78 |
A |
| IC @ TC = 100°C | Continuous Collector Current |
42 | |
| ICM | Pulsed Collector Current |
312 | |
| ILM | Clamped Inductive Load Current |
312 | |
| IF @ TC = 100°C | Diode Continuous Forward Current |
42 | |
| IFM | Diode Maximum Forward Current |
312 | |
| VGE | Gate-to-Emitter Voltage |
± 20 |
V |
| PD @ TC = 25°C | Maximum Power Dissipation |
350 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
140 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
|
Parameter |
Typ. |
Max. |
Units | |
| RJC | Junction-to-Case - IGBT |
- |
0.36 |
°C/W |
| RJC | Junction-to-Case - Diode |
- |
0.69 | |
| RCS | SMD-10 Case-to-Heatsink (typical), * |
0.44 |
- | |
| Wt | Weight |
6.0 (0.21) |
- |
g(oz) |
IRG4ZH70UD Features
·UltraFast IGBT optimized for high switching frequencies
·IGBT co-packaged with HEXFREDTM ultrafast,ultra-soft recovery antiparallel diodes for use in bridge configurations
·Low Gate Charge
·Low profile low inductance SMD-10 Package
·Separated control & Power-connections for easy paralleling
·Inherently good coplanarity
·Easy solder inspection and cleaning
·IGBT co-packaged with HEXFREDTM ultrafast,ultra-soft recovery antiparallel diodes for use in bridge configurations
·Low Gate Charge
·Low profile low inductance SMD-10 Package
·Separated control & Power-connections for easy paralleling
·Inherently good coplanarity
·Easy solder inspection and cleaning
IRG4ZH71KD Maximum Ratings
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Breakdown Voltage |
1200 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
78 |
A |
| IC @ TC = 100°C | Continuous Collector Current |
42 | |
| ICM | Pulsed Collector Current |
156 | |
| ILM | Clamped Inductive Load Current |
156 | |
| IF @ TC = 100°C | Diode Continuous Forward Current |
42 | |
| IFM | Diode Maximum Forward Current |
156 | |
| tsc | Short Circuit Withstand Time |
10 |
s |
| VGE | Gate-to-Emitter Voltage |
± 20 |
V |
| PD @ TC = 25°C | Maximum Power Dissipation |
350 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
140 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
|
Parameter |
Typ. |
Max. |
Units | |
| RJC | Junction-to-Case - IGBT |
- |
0.36 |
°C/W |
| RJC | Junction-to-Case - Diode |
- |
0.69 | |
| RCS | SMD-10 Case-to-Heatsink (typical), * |
0.44 |
- | |
| Wt | Weight |
6.0 (0.21) |
- |
g(oz) |
IRG4ZH71KD Features
• High short circuit rating optimized for motor control, tsc =10s, VCC = 720V , TJ = 125°C,VGE = 15V
• IGBT co-packaged with HEXFREDä ultrafast,ultra-soft-recovery antiparallel diodes for use in bridge configurations
• Combines low conduction losses with high switching speed
• Low profile low inductance SMD-10 Package
• Separated control & Power-connections for easy paralleling
• Inherently Good coplanarity
• Easy solder inspection and cleaning
• IGBT co-packaged with HEXFREDä ultrafast,ultra-soft-recovery antiparallel diodes for use in bridge configurations
• Combines low conduction losses with high switching speed
• Low profile low inductance SMD-10 Package
• Separated control & Power-connections for easy paralleling
• Inherently Good coplanarity
• Easy solder inspection and cleaning
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